Analysis of strain fields in silicon nanocrystals

Dündar E. Yilmaz, Ceyhun Bulutay, Tahir Çaǧin

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.

Original languageEnglish (US)
Article number191914
JournalApplied Physics Letters
Volume94
Issue number19
DOIs
StatePublished - Jun 18 2009

Fingerprint

volumetric strain
nanocrystals
strain distribution
silicon
amorphous silicon
silicon dioxide
optical properties
matrices
profiles
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yilmaz, Dündar E. ; Bulutay, Ceyhun ; Çaǧin, Tahir. / Analysis of strain fields in silicon nanocrystals. In: Applied Physics Letters. 2009 ; Vol. 94, No. 19.
@article{7a776cb71761444bb6085fd7837c6c7a,
title = "Analysis of strain fields in silicon nanocrystals",
abstract = "Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 {\AA} distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.",
author = "Yilmaz, {D{\"u}ndar E.} and Ceyhun Bulutay and Tahir {\cC}aǧin",
year = "2009",
month = "6",
day = "18",
doi = "10.1063/1.3138163",
language = "English (US)",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

Analysis of strain fields in silicon nanocrystals. / Yilmaz, Dündar E.; Bulutay, Ceyhun; Çaǧin, Tahir.

In: Applied Physics Letters, Vol. 94, No. 19, 191914, 18.06.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis of strain fields in silicon nanocrystals

AU - Yilmaz, Dündar E.

AU - Bulutay, Ceyhun

AU - Çaǧin, Tahir

PY - 2009/6/18

Y1 - 2009/6/18

N2 - Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.

AB - Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.

UR - http://www.scopus.com/inward/record.url?scp=67049154449&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67049154449&partnerID=8YFLogxK

U2 - 10.1063/1.3138163

DO - 10.1063/1.3138163

M3 - Article

AN - SCOPUS:67049154449

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 191914

ER -