Analysis of strain fields in silicon nanocrystals

Dündar E. Yilmaz, Ceyhun Bulutay, Tahir Çaǧin

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however, it becomes nonuniform within 2-3 Å distance to the nanocrystal surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis.

Original languageEnglish (US)
Article number191914
JournalApplied Physics Letters
Volume94
Issue number19
DOIs
StatePublished - Jun 18 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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