Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates

L. Lukasiak, P. Roman, A. Jakubowski, Jerzy Ruzyllo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Surface photovoltage (SPV) measurements may provide an effective method for determining electrical properties of silicon on insulator (SOI) surfaces. In the experimental part of this work the use of the non-contact SPV-based method of surface charge profiling (SCP) in the monitoring of surface charges is explored. It was demonstrated that application of this method is constrained by the interactions between charges on the Si surface and at the interface between the Si active layer and buried oxide (box). These interactions are subsequently modeled and related to the SCP measurements. It is demonstrated that at a given doping level, the thickness of the active layer and density of charge associated with the box are factors predetermining the effectiveness of this method in SOI surface characterization. Through modeling, the SOI substrate parameter space for which the SCP method can yield useful information is defined.

Original languageEnglish (US)
Pages (from-to)95-100
Number of pages6
JournalSolid-State Electronics
Volume45
Issue number1
DOIs
StatePublished - Jan 1 2001

Fingerprint

Silicon
Surface charge
insulators
silicon
Substrates
Oxides
interactions
Surface measurement
photovoltages
Electric properties
Doping (additives)
Monitoring
oxides
electrical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lukasiak, L. ; Roman, P. ; Jakubowski, A. ; Ruzyllo, Jerzy. / Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates. In: Solid-State Electronics. 2001 ; Vol. 45, No. 1. pp. 95-100.
@article{94ea60c1093b4e1eba3c673f70bf6a3e,
title = "Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates",
abstract = "Surface photovoltage (SPV) measurements may provide an effective method for determining electrical properties of silicon on insulator (SOI) surfaces. In the experimental part of this work the use of the non-contact SPV-based method of surface charge profiling (SCP) in the monitoring of surface charges is explored. It was demonstrated that application of this method is constrained by the interactions between charges on the Si surface and at the interface between the Si active layer and buried oxide (box). These interactions are subsequently modeled and related to the SCP measurements. It is demonstrated that at a given doping level, the thickness of the active layer and density of charge associated with the box are factors predetermining the effectiveness of this method in SOI surface characterization. Through modeling, the SOI substrate parameter space for which the SCP method can yield useful information is defined.",
author = "L. Lukasiak and P. Roman and A. Jakubowski and Jerzy Ruzyllo",
year = "2001",
month = "1",
day = "1",
doi = "10.1016/S0038-1101(00)00224-0",
language = "English (US)",
volume = "45",
pages = "95--100",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "1",

}

Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates. / Lukasiak, L.; Roman, P.; Jakubowski, A.; Ruzyllo, Jerzy.

In: Solid-State Electronics, Vol. 45, No. 1, 01.01.2001, p. 95-100.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates

AU - Lukasiak, L.

AU - Roman, P.

AU - Jakubowski, A.

AU - Ruzyllo, Jerzy

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Surface photovoltage (SPV) measurements may provide an effective method for determining electrical properties of silicon on insulator (SOI) surfaces. In the experimental part of this work the use of the non-contact SPV-based method of surface charge profiling (SCP) in the monitoring of surface charges is explored. It was demonstrated that application of this method is constrained by the interactions between charges on the Si surface and at the interface between the Si active layer and buried oxide (box). These interactions are subsequently modeled and related to the SCP measurements. It is demonstrated that at a given doping level, the thickness of the active layer and density of charge associated with the box are factors predetermining the effectiveness of this method in SOI surface characterization. Through modeling, the SOI substrate parameter space for which the SCP method can yield useful information is defined.

AB - Surface photovoltage (SPV) measurements may provide an effective method for determining electrical properties of silicon on insulator (SOI) surfaces. In the experimental part of this work the use of the non-contact SPV-based method of surface charge profiling (SCP) in the monitoring of surface charges is explored. It was demonstrated that application of this method is constrained by the interactions between charges on the Si surface and at the interface between the Si active layer and buried oxide (box). These interactions are subsequently modeled and related to the SCP measurements. It is demonstrated that at a given doping level, the thickness of the active layer and density of charge associated with the box are factors predetermining the effectiveness of this method in SOI surface characterization. Through modeling, the SOI substrate parameter space for which the SCP method can yield useful information is defined.

UR - http://www.scopus.com/inward/record.url?scp=0035157289&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035157289&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(00)00224-0

DO - 10.1016/S0038-1101(00)00224-0

M3 - Article

VL - 45

SP - 95

EP - 100

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 1

ER -