Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces

Yoontae Hwang, Roman Engel-Herbert, Nicholas G. Rudawski, Susanne Stemmer

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

HfO2 was deposited on n - and p -type In0.53 Ga 0.47 As by chemical beam deposition. Interface trap densities (D it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm-2 eV-1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n -type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.

Original languageEnglish (US)
Article number102910
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
StatePublished - Mar 26 2010

Fingerprint

traps
energy levels
capacitance
inversions
electric potential
room temperature
curves
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Hwang, Yoontae ; Engel-Herbert, Roman ; Rudawski, Nicholas G. ; Stemmer, Susanne. / Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces. In: Applied Physics Letters. 2010 ; Vol. 96, No. 10.
@article{b6985195a3ba47a9a948dd3eefbb976d,
title = "Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces",
abstract = "HfO2 was deposited on n - and p -type In0.53 Ga 0.47 As by chemical beam deposition. Interface trap densities (D it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm-2 eV-1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n -type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.",
author = "Yoontae Hwang and Roman Engel-Herbert and Rudawski, {Nicholas G.} and Susanne Stemmer",
year = "2010",
month = "3",
day = "26",
doi = "10.1063/1.3360221",
language = "English (US)",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces. / Hwang, Yoontae; Engel-Herbert, Roman; Rudawski, Nicholas G.; Stemmer, Susanne.

In: Applied Physics Letters, Vol. 96, No. 10, 102910, 26.03.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces

AU - Hwang, Yoontae

AU - Engel-Herbert, Roman

AU - Rudawski, Nicholas G.

AU - Stemmer, Susanne

PY - 2010/3/26

Y1 - 2010/3/26

N2 - HfO2 was deposited on n - and p -type In0.53 Ga 0.47 As by chemical beam deposition. Interface trap densities (D it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm-2 eV-1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n -type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.

AB - HfO2 was deposited on n - and p -type In0.53 Ga 0.47 As by chemical beam deposition. Interface trap densities (D it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm-2 eV-1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n -type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.

UR - http://www.scopus.com/inward/record.url?scp=77949690122&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949690122&partnerID=8YFLogxK

U2 - 10.1063/1.3360221

DO - 10.1063/1.3360221

M3 - Article

AN - SCOPUS:77949690122

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102910

ER -