Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces

Yoontae Hwang, Roman Engel-Herbert, Nicholas G. Rudawski, Susanne Stemmer

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Abstract

HfO2 was deposited on n - and p -type In0.53 Ga 0.47 As by chemical beam deposition. Interface trap densities (D it) and their energy level distribution were quantified using the conductance method in a wide temperature range (77 to 300 K). A trap level close to the intrinsic energy level caused the Dit to rise above 1013 cm-2 eV-1. The trap level at midgap gives rise to false inversion behavior in the capacitance-voltage curves for n -type channels at room temperature. The apparent decrease of the Dit close to the band edges is discussed.

Original languageEnglish (US)
Article number102910
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
StatePublished - Mar 26 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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