Abstract
Laser diodes with the multilayer heterostructure have been observed in cathodoluminescence (CL) images using an analytical color fluorescence electron microscope. An AlGalnP/GalnP chip, which is commercially available as 670 run red laser diode, emits red CL from a part of the p-AlGalnP layer just above the p-GalnP layer and between the n-GaAs blocking layers. A chip that has no blocking layers emits only very weak red CL, which indicates the strong relation of CL with laser emission. In images of a CdZnSe/ZnSe diode that emits 530 run blue laser light at room temperature, a blue CL emission appears which is much stronger in the n-type region, in particular in the n-ZnSSe cladding layer, than in the p-type region. Fade-out of the blue CL and/or appearance of yellow-red emission take place in the area including dislocations.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 77-83 |
| Number of pages | 7 |
| Journal | Journal of Electron Microscopy |
| Volume | 43 |
| Issue number | 2 |
| State | Published - Apr 1 1994 |
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All Science Journal Classification (ASJC) codes
- Instrumentation
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Analytical color fluorescence electron microscopy observation of laser diodes. / Saijo, Hiroshi; Ning, Gang; Yabuuchi, Yasufumi; Takahashi, Yasuhito; Isshiki, Toshiyuki; Shiojiri, Makoto; Ogawa, Kazuo.
In: Journal of Electron Microscopy, Vol. 43, No. 2, 01.04.1994, p. 77-83.Research output: Contribution to journal › Article
TY - JOUR
T1 - Analytical color fluorescence electron microscopy observation of laser diodes
AU - Saijo, Hiroshi
AU - Ning, Gang
AU - Yabuuchi, Yasufumi
AU - Takahashi, Yasuhito
AU - Isshiki, Toshiyuki
AU - Shiojiri, Makoto
AU - Ogawa, Kazuo
PY - 1994/4/1
Y1 - 1994/4/1
N2 - Laser diodes with the multilayer heterostructure have been observed in cathodoluminescence (CL) images using an analytical color fluorescence electron microscope. An AlGalnP/GalnP chip, which is commercially available as 670 run red laser diode, emits red CL from a part of the p-AlGalnP layer just above the p-GalnP layer and between the n-GaAs blocking layers. A chip that has no blocking layers emits only very weak red CL, which indicates the strong relation of CL with laser emission. In images of a CdZnSe/ZnSe diode that emits 530 run blue laser light at room temperature, a blue CL emission appears which is much stronger in the n-type region, in particular in the n-ZnSSe cladding layer, than in the p-type region. Fade-out of the blue CL and/or appearance of yellow-red emission take place in the area including dislocations.
AB - Laser diodes with the multilayer heterostructure have been observed in cathodoluminescence (CL) images using an analytical color fluorescence electron microscope. An AlGalnP/GalnP chip, which is commercially available as 670 run red laser diode, emits red CL from a part of the p-AlGalnP layer just above the p-GalnP layer and between the n-GaAs blocking layers. A chip that has no blocking layers emits only very weak red CL, which indicates the strong relation of CL with laser emission. In images of a CdZnSe/ZnSe diode that emits 530 run blue laser light at room temperature, a blue CL emission appears which is much stronger in the n-type region, in particular in the n-ZnSSe cladding layer, than in the p-type region. Fade-out of the blue CL and/or appearance of yellow-red emission take place in the area including dislocations.
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M3 - Article
AN - SCOPUS:0004944663
VL - 43
SP - 77
EP - 83
JO - Microscopy (Oxford, England)
JF - Microscopy (Oxford, England)
SN - 2050-5698
IS - 2
ER -