Analytical color fluorescence electron microscopy observation of laser diodes

Hiroshi Saijo, Gang Ning, Yasufumi Yabuuchi, Yasuhito Takahashi, Toshiyuki Isshiki, Makoto Shiojiri, Kazuo Ogawa

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Laser diodes with the multilayer heterostructure have been observed in cathodoluminescence (CL) images using an analytical color fluorescence electron microscope. An AlGalnP/GalnP chip, which is commercially available as 670 run red laser diode, emits red CL from a part of the p-AlGalnP layer just above the p-GalnP layer and between the n-GaAs blocking layers. A chip that has no blocking layers emits only very weak red CL, which indicates the strong relation of CL with laser emission. In images of a CdZnSe/ZnSe diode that emits 530 run blue laser light at room temperature, a blue CL emission appears which is much stronger in the n-type region, in particular in the n-ZnSSe cladding layer, than in the p-type region. Fade-out of the blue CL and/or appearance of yellow-red emission take place in the area including dislocations.

Original languageEnglish (US)
Pages (from-to)77-83
Number of pages7
JournalJournal of Electron Microscopy
Volume43
Issue number2
StatePublished - Apr 1 1994

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Semiconductor Lasers
Cathodoluminescence
Fluorescence microscopy
cathodoluminescence
Fluorescence Microscopy
Electron microscopy
Semiconductor lasers
electron microscopy
Electron Microscopy
Lasers
Color
semiconductor lasers
Observation
color
fluorescence
Fluorescence
Electrons
Light
Temperature
chips

All Science Journal Classification (ASJC) codes

  • Instrumentation

Cite this

Saijo, H., Ning, G., Yabuuchi, Y., Takahashi, Y., Isshiki, T., Shiojiri, M., & Ogawa, K. (1994). Analytical color fluorescence electron microscopy observation of laser diodes. Journal of Electron Microscopy, 43(2), 77-83.
Saijo, Hiroshi ; Ning, Gang ; Yabuuchi, Yasufumi ; Takahashi, Yasuhito ; Isshiki, Toshiyuki ; Shiojiri, Makoto ; Ogawa, Kazuo. / Analytical color fluorescence electron microscopy observation of laser diodes. In: Journal of Electron Microscopy. 1994 ; Vol. 43, No. 2. pp. 77-83.
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abstract = "Laser diodes with the multilayer heterostructure have been observed in cathodoluminescence (CL) images using an analytical color fluorescence electron microscope. An AlGalnP/GalnP chip, which is commercially available as 670 run red laser diode, emits red CL from a part of the p-AlGalnP layer just above the p-GalnP layer and between the n-GaAs blocking layers. A chip that has no blocking layers emits only very weak red CL, which indicates the strong relation of CL with laser emission. In images of a CdZnSe/ZnSe diode that emits 530 run blue laser light at room temperature, a blue CL emission appears which is much stronger in the n-type region, in particular in the n-ZnSSe cladding layer, than in the p-type region. Fade-out of the blue CL and/or appearance of yellow-red emission take place in the area including dislocations.",
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Saijo, H, Ning, G, Yabuuchi, Y, Takahashi, Y, Isshiki, T, Shiojiri, M & Ogawa, K 1994, 'Analytical color fluorescence electron microscopy observation of laser diodes', Journal of Electron Microscopy, vol. 43, no. 2, pp. 77-83.

Analytical color fluorescence electron microscopy observation of laser diodes. / Saijo, Hiroshi; Ning, Gang; Yabuuchi, Yasufumi; Takahashi, Yasuhito; Isshiki, Toshiyuki; Shiojiri, Makoto; Ogawa, Kazuo.

In: Journal of Electron Microscopy, Vol. 43, No. 2, 01.04.1994, p. 77-83.

Research output: Contribution to journalArticle

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AU - Saijo, Hiroshi

AU - Ning, Gang

AU - Yabuuchi, Yasufumi

AU - Takahashi, Yasuhito

AU - Isshiki, Toshiyuki

AU - Shiojiri, Makoto

AU - Ogawa, Kazuo

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N2 - Laser diodes with the multilayer heterostructure have been observed in cathodoluminescence (CL) images using an analytical color fluorescence electron microscope. An AlGalnP/GalnP chip, which is commercially available as 670 run red laser diode, emits red CL from a part of the p-AlGalnP layer just above the p-GalnP layer and between the n-GaAs blocking layers. A chip that has no blocking layers emits only very weak red CL, which indicates the strong relation of CL with laser emission. In images of a CdZnSe/ZnSe diode that emits 530 run blue laser light at room temperature, a blue CL emission appears which is much stronger in the n-type region, in particular in the n-ZnSSe cladding layer, than in the p-type region. Fade-out of the blue CL and/or appearance of yellow-red emission take place in the area including dislocations.

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Saijo H, Ning G, Yabuuchi Y, Takahashi Y, Isshiki T, Shiojiri M et al. Analytical color fluorescence electron microscopy observation of laser diodes. Journal of Electron Microscopy. 1994 Apr 1;43(2):77-83.