This paper derives an analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFET. This analytical model involves the parasitic inductances, the nonlinearity of the junction capacitances and the nonlinearity of the transconductance and so on. The basis principle of establishing analytical model is illustrated in detail and the extraction of the key parameters is given. The analytical model of SiC MOSFET is successfully validated by experimental results. We did the analysis of the switching loss based on experimental results is imprecise. Finally, the effects of parasitic elements on the switching performance of SiC MOSFET are accounted and the circuit design rules of high frequency circuit are given.
|Original language||English (US)|
|Number of pages||11|
|Journal||Diangong Jishu Xuebao/Transactions of China Electrotechnical Society|
|State||Published - Jan 10 2017|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering