Analyzing losses using junction temperature of 300V 2.4kW 96% efficient, 1MHz GaN synchronous boost converter

Brian Hughes, James Lazar, Stephen Hulsey, Austin Garrido, Daniel Zehnder, Marcel Musni, Rongming Chu, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

New techniques for measuring and analyzing losses in GaN power converters are presented. A 2.4kW synchronous boost converter, switching 300V at 1MHz with normally-off, AlN-base gate, AlGaN/GaN HFETs [1], serves as a vehicle to substantiate the results. An infrared camera is utilized to accurately measure temperatures of the upper and lower switches, as a function of switched current. These temperature measurements are correlated to loss in the respective switches, utilizing temperature data obtained via DC loss measurements. The higher temperature observed in the lower switch results from the switching loss in that switch, and is clearly evident in the thermal images. Analysis of the temperature dependence exposes the loss due to dynamic on-resistance and the switching loss. The extracted parameters accurately model both the efficiency and junction temperatures versus switching current.

Original languageEnglish (US)
Title of host publication1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
Pages131-134
Number of pages4
DOIs
StatePublished - Dec 1 2013
Event1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Columbus, OH, United States
Duration: Oct 27 2013Oct 29 2013

Publication series

Name1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings

Conference

Conference1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013
CountryUnited States
CityColumbus, OH
Period10/27/1310/29/13

Fingerprint

Switches
Temperature
Power converters
Temperature measurement
Cameras
Infrared radiation

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Hughes, B., Lazar, J., Hulsey, S., Garrido, A., Zehnder, D., Musni, M., ... Boutros, K. (2013). Analyzing losses using junction temperature of 300V 2.4kW 96% efficient, 1MHz GaN synchronous boost converter. In 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings (pp. 131-134). [6695579] (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings). https://doi.org/10.1109/WiPDA.2013.6695579
Hughes, Brian ; Lazar, James ; Hulsey, Stephen ; Garrido, Austin ; Zehnder, Daniel ; Musni, Marcel ; Chu, Rongming ; Boutros, Karim. / Analyzing losses using junction temperature of 300V 2.4kW 96% efficient, 1MHz GaN synchronous boost converter. 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 2013. pp. 131-134 (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).
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abstract = "New techniques for measuring and analyzing losses in GaN power converters are presented. A 2.4kW synchronous boost converter, switching 300V at 1MHz with normally-off, AlN-base gate, AlGaN/GaN HFETs [1], serves as a vehicle to substantiate the results. An infrared camera is utilized to accurately measure temperatures of the upper and lower switches, as a function of switched current. These temperature measurements are correlated to loss in the respective switches, utilizing temperature data obtained via DC loss measurements. The higher temperature observed in the lower switch results from the switching loss in that switch, and is clearly evident in the thermal images. Analysis of the temperature dependence exposes the loss due to dynamic on-resistance and the switching loss. The extracted parameters accurately model both the efficiency and junction temperatures versus switching current.",
author = "Brian Hughes and James Lazar and Stephen Hulsey and Austin Garrido and Daniel Zehnder and Marcel Musni and Rongming Chu and Karim Boutros",
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Hughes, B, Lazar, J, Hulsey, S, Garrido, A, Zehnder, D, Musni, M, Chu, R & Boutros, K 2013, Analyzing losses using junction temperature of 300V 2.4kW 96% efficient, 1MHz GaN synchronous boost converter. in 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings., 6695579, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings, pp. 131-134, 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013, Columbus, OH, United States, 10/27/13. https://doi.org/10.1109/WiPDA.2013.6695579

Analyzing losses using junction temperature of 300V 2.4kW 96% efficient, 1MHz GaN synchronous boost converter. / Hughes, Brian; Lazar, James; Hulsey, Stephen; Garrido, Austin; Zehnder, Daniel; Musni, Marcel; Chu, Rongming; Boutros, Karim.

1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 2013. p. 131-134 6695579 (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - New techniques for measuring and analyzing losses in GaN power converters are presented. A 2.4kW synchronous boost converter, switching 300V at 1MHz with normally-off, AlN-base gate, AlGaN/GaN HFETs [1], serves as a vehicle to substantiate the results. An infrared camera is utilized to accurately measure temperatures of the upper and lower switches, as a function of switched current. These temperature measurements are correlated to loss in the respective switches, utilizing temperature data obtained via DC loss measurements. The higher temperature observed in the lower switch results from the switching loss in that switch, and is clearly evident in the thermal images. Analysis of the temperature dependence exposes the loss due to dynamic on-resistance and the switching loss. The extracted parameters accurately model both the efficiency and junction temperatures versus switching current.

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Hughes B, Lazar J, Hulsey S, Garrido A, Zehnder D, Musni M et al. Analyzing losses using junction temperature of 300V 2.4kW 96% efficient, 1MHz GaN synchronous boost converter. In 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings. 2013. p. 131-134. 6695579. (1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings). https://doi.org/10.1109/WiPDA.2013.6695579