Angle-resolved SIMS studies of AlxGa(1-x)As {001} (2x4) surface reconstruction

S. H. Goss, P. B.S. Kodali, B. J. Garrison, N. Winograd

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Angular distributions of Al+ and Ga+ ions desorbed by keV particle bombardment have been measured from a modified AlxGa(1-x)As {001} (2 × 4) surface reconstruction. This surface was prepared from the GaAs{001} c(4 × 4) surface by deposition of one monolayer of aluminum in situ via molecular beam epitaxy. The surface was then annealed to 550 K producing a (2 × 4) reconstruction. By comparing experimental angular distribution results with molecular dynamics simulations of the bombardment process, we show that Al and Ga segregate into different layers of the prepared (2 × 4) surface.

Original languageEnglish (US)
Pages (from-to)44-49
Number of pages6
JournalSurface Science
Volume387
Issue number1-3
DOIs
StatePublished - Oct 8 1997

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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