Anisotropic spread of surface dimer openings in the initial stages of the epitaxial growth of Si on Si{100}

D. Srivastava, B. J. Garrison, D. W. Brenner

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Abstract

The initial stages of the epitaxial growth on the dimer-reconstructed Si{100} surface is modeled via molecular-dynamics simulations using the Tersoff many-body potential. We report a novel anisotropic spread of surface dimer openings in the direction perpendicular to the original dimer rows. This correlated reaction mechanism dramatically increases the crystal-growth process in one direction as confirmed by recent scanning-tunneling-microscope studies.

Original languageEnglish (US)
Pages (from-to)302-305
Number of pages4
JournalPhysical Review Letters
Volume63
Issue number3
DOIs
StatePublished - Jan 1 1989

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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