Annealed Ag contacts to MoS2 field-effect transistors

Michael Abraham, Suzanne E. Mohney

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Silver contacts to few-layer (5 to 14 layers thick) MoS2 have been studied before and after annealing. Annealing was found to be critical for reducing the contact resistance but did not degrade the operation of field-effect transistors that are part of the test structure. The contact resistance for the as-deposited samples was in the range of 0.8-3.5 kΩ μm. On the other hand, the contact resistance was reduced to 0.2-0.7 kΩ μm, evaluated at a constant sheet resistance of 32 kΩ/□, after annealing at 250 or 300 °C. The reduced contact resistance is attributed to diffusion of Ag into the MoS2 and doping, as supported by further electrical characterization of the contacts and devices.

Original languageEnglish (US)
Article number115306
JournalJournal of Applied Physics
Volume122
Issue number11
DOIs
StatePublished - Sep 21 2017

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contact resistance
field effect transistors
annealing
silver

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Annealed Ag contacts to MoS2 field-effect transistors. / Abraham, Michael; Mohney, Suzanne E.

In: Journal of Applied Physics, Vol. 122, No. 11, 115306, 21.09.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Annealed Ag contacts to MoS2 field-effect transistors

AU - Abraham, Michael

AU - Mohney, Suzanne E.

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AB - Silver contacts to few-layer (5 to 14 layers thick) MoS2 have been studied before and after annealing. Annealing was found to be critical for reducing the contact resistance but did not degrade the operation of field-effect transistors that are part of the test structure. The contact resistance for the as-deposited samples was in the range of 0.8-3.5 kΩ μm. On the other hand, the contact resistance was reduced to 0.2-0.7 kΩ μm, evaluated at a constant sheet resistance of 32 kΩ/□, after annealing at 250 or 300 °C. The reduced contact resistance is attributed to diffusion of Ag into the MoS2 and doping, as supported by further electrical characterization of the contacts and devices.

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