Anomalous anisotropic magnetoresistance in topological insulator films

Jian Wang, Handong Li, Cuizu Chang, Ke He, Joon Sue Lee, Haizhou Lu, Yi Sun, Xucun Ma, Nitin Samarth, Shunqing Shen, Qikun Xue, Maohai Xie, Moses H.W. Chan

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Abstract

Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurements, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films. Interestingly, measurements under an in-plane magnetic field, along and perpendicular to the bias current show anomalous opposite magnetoresistance.

Original languageEnglish (US)
Pages (from-to)739-746
Number of pages8
JournalNano Research
Volume5
Issue number10
DOIs
StatePublished - Oct 2012

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Wang, J., Li, H., Chang, C., He, K., Lee, J. S., Lu, H., Sun, Y., Ma, X., Samarth, N., Shen, S., Xue, Q., Xie, M., & Chan, M. H. W. (2012). Anomalous anisotropic magnetoresistance in topological insulator films. Nano Research, 5(10), 739-746. https://doi.org/10.1007/s12274-012-0260-z