Anomalous domain wall magnetoresistance in ultrathin manganite films near M-I transition boundary

Qi Li, H. S. Wang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Resistance and magnetoresistance in compressively strained epitaxial Pr2/3Sr1/3MnO3 (PSMO) ultrathin films have been studied. The samples were first demagnetized in different ways so that different magnetic structures were created, such as random domain and single domain states. Very large difference in resistance in zero applied magnetic field was observed between different states. The large change of resistance between states is attributed to spin-dependent scattering at the domain walls. We have shown for the first time that large domain wall resistance can be obtained in strained ultrathin manganite films and the result cannot be explained by the double-exchange model.

Original languageEnglish (US)
Pages (from-to)231-234
Number of pages4
JournalJournal of Superconductivity
Volume14
Issue number2
StatePublished - Dec 1 2001

Fingerprint

Ultrathin films
Domain walls
Magnetoresistance
domain wall
Magnetic structure
Scattering
Magnetic fields
manganite
scattering
magnetic fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)

Cite this

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Anomalous domain wall magnetoresistance in ultrathin manganite films near M-I transition boundary. / Li, Qi; Wang, H. S.

In: Journal of Superconductivity, Vol. 14, No. 2, 01.12.2001, p. 231-234.

Research output: Contribution to journalArticle

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