Anomalous evolution of bubbles in krypton-implanted SiO2

Hannan Assaf, Esidor Ntsoenzok, Marie France Barthe, Elisa Leoni, Marie Odile Ruault, S. Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Thermally grown SiO2 was implanted at room temperature with 220keV Kr in order to generate bubbles/cavities in the sample. The formation and thermal stability of these bubbles/cavities is studied in this work. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to obtain a comprehensive characterization of defects (vacancies, interstitital, bubbles, and other types of defects) created by Kr implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM are a consequence of the interaction between Kr and vacancies (V), with VnKr m, complexes created in the entire of implanted zone. After annealing, bubbles/cavities disappear from SiO2 due to the strong desorption of Kr and the decrease in vacancy concentration.

Original languageEnglish (US)
Title of host publicationSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
PublisherMaterials Research Society
Pages125-130
Number of pages6
ISBN (Print)9781558999541
DOIs
StatePublished - 2007
EventSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume994
ISSN (Print)0272-9172

Other

OtherSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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