Antireflection layers and planarization for microlithography

Research output: Contribution to specialist publicationArticle

15 Citations (Scopus)

Abstract

Resolution better than 0.5 μm using optical lithography is dependent upon two critical processes: antireflection coatings (ARCs) and planarization. The merits and shortcomings of two general types of ARCs are discussed, and planarization techniques are reviewed with emphasis on planarization over an entire exposure field.

Original languageEnglish (US)
Pages57-62
Number of pages6
Volume34
No11
Specialist publicationSolid State Technology
StatePublished - Nov 1 1991

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Antireflection coatings
antireflection coatings
Lithography
Photolithography
lithography

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Antireflection layers and planarization for microlithography",
abstract = "Resolution better than 0.5 μm using optical lithography is dependent upon two critical processes: antireflection coatings (ARCs) and planarization. The merits and shortcomings of two general types of ARCs are discussed, and planarization techniques are reviewed with emphasis on planarization over an entire exposure field.",
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Antireflection layers and planarization for microlithography. / Horn, Mark William.

In: Solid State Technology, Vol. 34, No. 11, 01.11.1991, p. 57-62.

Research output: Contribution to specialist publicationArticle

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