Apparatus for electrically detected electron nuclear double resonance in solid state electronic devices

Brian R. Manning; Ryan J. Waskiewicz; Duane J. McCrory; Patrick M. Lenahan

doi:10.1063/1.5123619

Apparatus for electrically detected electron nuclear double resonance in solid state electronic devices

Brian R. Manning, Ryan J. Waskiewicz, Duane J. McCrory, Patrick M. Lenahan

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have developed a sensitive electron nuclear double resonance spectrometer in which the detection takes place through electrically detected magnetic resonance. We demonstrate that the spectrometer can provide reasonably high signal to noise spectra of ¹⁴N interactions with deep level centers in a fully processed bipolar junction transistor at room temperature.

Original language	English (US)
Article number	123111
Journal	Review of Scientific Instruments
Volume	90
Issue number	12
DOIs	https://doi.org/10.1063/1.5123619
State	Published - Dec 1 2019

All Science Journal Classification (ASJC) codes

Instrumentation

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10.1063/1.5123619

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title = "Apparatus for electrically detected electron nuclear double resonance in solid state electronic devices",

abstract = "We have developed a sensitive electron nuclear double resonance spectrometer in which the detection takes place through electrically detected magnetic resonance. We demonstrate that the spectrometer can provide reasonably high signal to noise spectra of 14N interactions with deep level centers in a fully processed bipolar junction transistor at room temperature.",

author = "Manning, {Brian R.} and Waskiewicz, {Ryan J.} and McCrory, {Duane J.} and Lenahan, {Patrick M.}",

year = "2019",

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AU - McCrory, Duane J.

AU - Lenahan, Patrick M.

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AB - We have developed a sensitive electron nuclear double resonance spectrometer in which the detection takes place through electrically detected magnetic resonance. We demonstrate that the spectrometer can provide reasonably high signal to noise spectra of 14N interactions with deep level centers in a fully processed bipolar junction transistor at room temperature.

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