Approaches to designing thermally stable Schottky contacts to n-GaN

H. S. Venugopalan, Suzanne E. Mohney, J. M. DeLucca, R. J. Molnar

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The barrier heights of PdIn, Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage and capacitance-voltage measurements. Elemental Pd and Ni contacts were also investigated for comparison. In each case, the barrier heights were determined as a function of annealing temperature. It was shown that stoichiometric PdIn contacts were more stable than Pd-only contacts. Similarly, Ni/Ga/Ni diodes were found to be more stable than Ni diodes. Both the Ni/Ga/Ni contact and the elemental Re contact were stable on short-term annealing up to 700°C.

Original languageEnglish (US)
Pages (from-to)757-761
Number of pages5
JournalSemiconductor Science and Technology
Volume14
Issue number9
DOIs
StatePublished - Sep 1 1999

Fingerprint

electric contacts
Diodes
Annealing
Capacitance measurement
Voltage measurement
diodes
annealing
electrical measurement
Electric potential
capacitance
electric potential
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Venugopalan, H. S. ; Mohney, Suzanne E. ; DeLucca, J. M. ; Molnar, R. J. / Approaches to designing thermally stable Schottky contacts to n-GaN. In: Semiconductor Science and Technology. 1999 ; Vol. 14, No. 9. pp. 757-761.
@article{ee8064fb7bcb49a594630d53b6babd1e,
title = "Approaches to designing thermally stable Schottky contacts to n-GaN",
abstract = "The barrier heights of PdIn, Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage and capacitance-voltage measurements. Elemental Pd and Ni contacts were also investigated for comparison. In each case, the barrier heights were determined as a function of annealing temperature. It was shown that stoichiometric PdIn contacts were more stable than Pd-only contacts. Similarly, Ni/Ga/Ni diodes were found to be more stable than Ni diodes. Both the Ni/Ga/Ni contact and the elemental Re contact were stable on short-term annealing up to 700°C.",
author = "Venugopalan, {H. S.} and Mohney, {Suzanne E.} and DeLucca, {J. M.} and Molnar, {R. J.}",
year = "1999",
month = "9",
day = "1",
doi = "10.1088/0268-1242/14/9/303",
language = "English (US)",
volume = "14",
pages = "757--761",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "9",

}

Approaches to designing thermally stable Schottky contacts to n-GaN. / Venugopalan, H. S.; Mohney, Suzanne E.; DeLucca, J. M.; Molnar, R. J.

In: Semiconductor Science and Technology, Vol. 14, No. 9, 01.09.1999, p. 757-761.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Approaches to designing thermally stable Schottky contacts to n-GaN

AU - Venugopalan, H. S.

AU - Mohney, Suzanne E.

AU - DeLucca, J. M.

AU - Molnar, R. J.

PY - 1999/9/1

Y1 - 1999/9/1

N2 - The barrier heights of PdIn, Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage and capacitance-voltage measurements. Elemental Pd and Ni contacts were also investigated for comparison. In each case, the barrier heights were determined as a function of annealing temperature. It was shown that stoichiometric PdIn contacts were more stable than Pd-only contacts. Similarly, Ni/Ga/Ni diodes were found to be more stable than Ni diodes. Both the Ni/Ga/Ni contact and the elemental Re contact were stable on short-term annealing up to 700°C.

AB - The barrier heights of PdIn, Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage and capacitance-voltage measurements. Elemental Pd and Ni contacts were also investigated for comparison. In each case, the barrier heights were determined as a function of annealing temperature. It was shown that stoichiometric PdIn contacts were more stable than Pd-only contacts. Similarly, Ni/Ga/Ni diodes were found to be more stable than Ni diodes. Both the Ni/Ga/Ni contact and the elemental Re contact were stable on short-term annealing up to 700°C.

UR - http://www.scopus.com/inward/record.url?scp=0033189904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033189904&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/14/9/303

DO - 10.1088/0268-1242/14/9/303

M3 - Article

VL - 14

SP - 757

EP - 761

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 9

ER -