Approaches to modifying solid phase crystallization kinetics for a-Si films

Reece Kingi, Yaozu Wang, Stephen Fonash, Osama Awadelkarim, Yuan Min Li

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

Three approaches to modifying the solid phase crystallization kinetics of amorphous silicon thin films are examined with the goal of reducing the thermal budget and improving the poly-Si quality for thin film transistor applications. The three approaches consist of (1) variations in the PECVD a-Si deposition parameters; (2) the application of pre-furnace-anneal surface treatments; and (3) using both rapid thermal annealing and furnace annealing at different temperatures. We also examine the synergism among these approaches. Results reveal that (1) film deposition dilution and dilution/temperature changes do not strongly affect crystallization time, but do affect grain size; (2) pre-anneal surface treatments can dramatically reduce the solid phase crystallization thermal budget for diluted films and act synergistically with deposition dilution or dilution/temperature effects; and (3) rapid thermal annealing leads to different crystallization kinetics from that seen for furnace annealing.

Original languageEnglish (US)
Pages (from-to)249-254
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume424
DOIs
StatePublished - Jan 1 1996
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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