Assessment of ECR argon plasma etching damage on Si and SiO2 interfaces

C. W. Nam, S. Ashok, W. Tsai, M. E. Day

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron cyclotron resonance (ECR) argon plasma has been used to etch the native oxide on Si and thermal SiO2. The Schottky barrier height modification on both n- and p-Si has been studied as a function of substrate bias and etch time. Deep Level Transient Spectroscopy (DLTS) measurements show clear peaks on both p- and n-Si, but with low levels of trap concentrations (1012-1013 cm-3), and decreasing with depth from the surface. The effects of thermal oxide etching on the Si/SiO2 interface have been estimated with MOS capacitors. Negative flat-voltage shift is observed after argon plasma exposure, which removes the thermal oxide at a rate of over 100 angstrom/min at 50 V bias. C-V measurements show an order of magnitude increase in interface trap density.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages861-866
Number of pages6
ISBN (Print)1558991743
StatePublished - Jan 1 1993
EventBeam Solid Interactions: Fundamentals and Applications - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume279
ISSN (Print)0272-9172

Other

OtherBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA
Period11/30/9212/4/92

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Nam, C. W., Ashok, S., Tsai, W., & Day, M. E. (1993). Assessment of ECR argon plasma etching damage on Si and SiO2 interfaces. In Materials Research Society Symposium Proceedings (pp. 861-866). (Materials Research Society Symposium Proceedings; Vol. 279). Publ by Materials Research Society.