Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Yuxuan Lin, Qiong Ma, Pin Chun Shen, Batyr Ilyas, Yaqing Bie, Albert Liao, Emre Ergeçen, Bingnan Han, Nannan Mao, Xu Zhang, Xiang Ji, Yuhao Zhang, Jihao Yin, Shengxi Huang, Mildred Dresselhaus, Nuh Gedik, Pablo Jarillo-Herrero, Xi Ling, Jing Kong, Tomás Palacios

Research output: Contribution to journalArticle

Abstract

The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2 sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.

Original languageEnglish (US)
Article numbereaav1493
JournalScience Advances
Volume5
Issue number6
DOIs
StatePublished - Jun 14 2019

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heterojunctions
graphene
broadband
asymmetry
p-n junctions
photometers
platforms
interactions
electrostatics
cooling
symmetry
synthesis
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • General

Cite this

Lin, Yuxuan ; Ma, Qiong ; Shen, Pin Chun ; Ilyas, Batyr ; Bie, Yaqing ; Liao, Albert ; Ergeçen, Emre ; Han, Bingnan ; Mao, Nannan ; Zhang, Xu ; Ji, Xiang ; Zhang, Yuhao ; Yin, Jihao ; Huang, Shengxi ; Dresselhaus, Mildred ; Gedik, Nuh ; Jarillo-Herrero, Pablo ; Ling, Xi ; Kong, Jing ; Palacios, Tomás. / Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions. In: Science Advances. 2019 ; Vol. 5, No. 6.
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title = "Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions",
abstract = "The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2 sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.",
author = "Yuxuan Lin and Qiong Ma and Shen, {Pin Chun} and Batyr Ilyas and Yaqing Bie and Albert Liao and Emre Erge{\cc}en and Bingnan Han and Nannan Mao and Xu Zhang and Xiang Ji and Yuhao Zhang and Jihao Yin and Shengxi Huang and Mildred Dresselhaus and Nuh Gedik and Pablo Jarillo-Herrero and Xi Ling and Jing Kong and Tom{\'a}s Palacios",
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Lin, Y, Ma, Q, Shen, PC, Ilyas, B, Bie, Y, Liao, A, Ergeçen, E, Han, B, Mao, N, Zhang, X, Ji, X, Zhang, Y, Yin, J, Huang, S, Dresselhaus, M, Gedik, N, Jarillo-Herrero, P, Ling, X, Kong, J & Palacios, T 2019, 'Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions', Science Advances, vol. 5, no. 6, eaav1493. https://doi.org/10.1126/sciadv.aav1493

Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions. / Lin, Yuxuan; Ma, Qiong; Shen, Pin Chun; Ilyas, Batyr; Bie, Yaqing; Liao, Albert; Ergeçen, Emre; Han, Bingnan; Mao, Nannan; Zhang, Xu; Ji, Xiang; Zhang, Yuhao; Yin, Jihao; Huang, Shengxi; Dresselhaus, Mildred; Gedik, Nuh; Jarillo-Herrero, Pablo; Ling, Xi; Kong, Jing; Palacios, Tomás.

In: Science Advances, Vol. 5, No. 6, eaav1493, 14.06.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

AU - Lin, Yuxuan

AU - Ma, Qiong

AU - Shen, Pin Chun

AU - Ilyas, Batyr

AU - Bie, Yaqing

AU - Liao, Albert

AU - Ergeçen, Emre

AU - Han, Bingnan

AU - Mao, Nannan

AU - Zhang, Xu

AU - Ji, Xiang

AU - Zhang, Yuhao

AU - Yin, Jihao

AU - Huang, Shengxi

AU - Dresselhaus, Mildred

AU - Gedik, Nuh

AU - Jarillo-Herrero, Pablo

AU - Ling, Xi

AU - Kong, Jing

AU - Palacios, Tomás

PY - 2019/6/14

Y1 - 2019/6/14

N2 - The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2 sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.

AB - The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2 sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.

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U2 - 10.1126/sciadv.aav1493

DO - 10.1126/sciadv.aav1493

M3 - Article

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