Atmosphere effects in the processing of silicon carbide and silicon oxycarbide thin films and coatings - Code: EP26

P. Colombo, T. E. Paulson, Carlo G. Pantano

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

Silicon carbide and silicon oxycarbide films were prepared from solutions of polycarbosilane and methyldimethoxysilane + tetraethoxysilane, respectively, and deposited on different substrates (Si wafers, stainless steel plates, sapphire and SiC fibers). The coatings were heated at different temperatures and in different atmospheres, such as regular grade argon, ultra high purity and argon vacuum. The films were characterized using different techniques (FT-IR, XRD, SIMS, Ellipsometry). The influence of the processing parameters (heat treatment temperature and atmosphere) on the final microstructure of the coatings is discussed in this article.

Original languageEnglish (US)
Pages (from-to)601-604
Number of pages4
JournalJournal of Sol-Gel Science and Technology
Volume2
Issue number1-3
DOIs
StatePublished - Jan 1 1994

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Atmosphere effects in the processing of silicon carbide and silicon oxycarbide thin films and coatings - Code: EP26'. Together they form a unique fingerprint.

  • Cite this