Atomic displacement effects in single-event gate rupture

Matthew J. Beck, Blair Richard Tuttle, Ronald D. Schrimpf, Daniel M. Fleetwood, Sokrates T. Pantelides

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Swift heavy ion (SHI) damage, including single-event gate rupture (SEGR), radiation-induced soft breakdown (RISB), and long-term reliability degradation (LTRD), plays an important role in limiting device lifetime and reliability. However, the atomic-scale physical origins of these phenomena have not been elucidated. In this work, we explain the underlying physical processes responsible for SHI-induced effects in oxides, providing a direct link between atomic motion and macroscopic electrical effects. SRIM 2008 calculations show that SHIs produce low-energy atomic recoils in ${\rm SiO}-{2}$. Using parameter-free quantum mechanical calculations, we probe the atomic-scale dynamics of the resulting low-energy atomic displacements. We show that low-energy displacements in ${\rm SiO}-{2}$ produce pockets containing high densities of network defects, and that these defects generate electronic states throughout the ${\rm SiO}-{2}$ band gap. These spatially correlated defect states represent a low-resistivity conducting pipe through ${\rm SiO}-{2}$ layers, and provide an atomistic mechanism for the formation of electrically-active damage that does not rely on thermal spike effects. In the case of SEGR, the conducting pipe allows energy stored on the gate capacitance to be discharged into the oxide, resulting in the permanent damage observed experimentally. The persistence of defects resulting from SHI-induced atomic displacements provides a physical explanation for percolation models of LTRD and RISB.

Original languageEnglish (US)
Article number4723776
Pages (from-to)3025-3031
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume55
Issue number6
DOIs
StatePublished - Dec 1 2008

Fingerprint

Heavy ions
heavy ions
Defects
defects
nuclear energy
damage
Nuclear energy
breakdown
Pipe
degradation
Radiation
conduction
Degradation
Oxides
oxides
Electronic states
radiation
spikes
Thermal effects
Energy gap

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Beck, M. J., Tuttle, B. R., Schrimpf, R. D., Fleetwood, D. M., & Pantelides, S. T. (2008). Atomic displacement effects in single-event gate rupture. IEEE Transactions on Nuclear Science, 55(6), 3025-3031. [4723776]. https://doi.org/10.1109/TNS.2008.2009215
Beck, Matthew J. ; Tuttle, Blair Richard ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Pantelides, Sokrates T. / Atomic displacement effects in single-event gate rupture. In: IEEE Transactions on Nuclear Science. 2008 ; Vol. 55, No. 6. pp. 3025-3031.
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Beck, MJ, Tuttle, BR, Schrimpf, RD, Fleetwood, DM & Pantelides, ST 2008, 'Atomic displacement effects in single-event gate rupture', IEEE Transactions on Nuclear Science, vol. 55, no. 6, 4723776, pp. 3025-3031. https://doi.org/10.1109/TNS.2008.2009215

Atomic displacement effects in single-event gate rupture. / Beck, Matthew J.; Tuttle, Blair Richard; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Pantelides, Sokrates T.

In: IEEE Transactions on Nuclear Science, Vol. 55, No. 6, 4723776, 01.12.2008, p. 3025-3031.

Research output: Contribution to journalArticle

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