Atomic hydrogen interactions with disordered regions in silicon

K. Srikanth, S Ashok

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

This article addresses issues related to hydrogen migration and acceptor deactivation with disordered regions in crystalline Si. It is shown that upon annealing, hydrogenated disordered regions can act as a source of H within the substrate resulting in up to a four decade change in resistivity in the vicinity of the disordered region. From a simple model for this sustained deactivation, an effective diffusion coefficient of H in silicon is calculated for various substrate resistivities. Further, the method of hydrogenation is shown to play a role when migration is to occur across carrier-neutralized zones.

Original languageEnglish (US)
Pages (from-to)1118-1123
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume10
Issue number4
DOIs
StatePublished - Jan 1 1992

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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