Atomic insights into material removal mechanisms in si and cu chemical mechanical polishing processes: ReaxFF reactive molecular dynamics simulations

Jialin Wen, Tianbao Ma, Xinchun Lu, Weiwei Zhang, Adri C.T. van Duin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, material removal mechanisms in Si and Cu chemical mechanical polishing processes are investigated using molecular dynamics simulations based on ReaxFF reactive force field. In the Si CMP process, the Si-Si bonds and Si-O-Si bonds of the Si substrate can be broken when they are connected to the silica surface through interfacial bridge bonds under the interfacial shear effects. Higher pressure leads to the removal of more Si atoms due to the formation of more interfacial bridge bonds. In the Cu CMP process, H2O, H2O2, glycine and silica surface can interact with the Cu surface, leading to the oxidation of Cu atoms and extrusion of these Cu atoms from the Cu surface, under the interfacial sliding process, these Cu atoms can be sheared off from the Cu surface.

Original languageEnglish (US)
Title of host publicationICPT 2017 - International Conference on Planarization/CMP Technology
PublisherVDE Verlag GmbH
Pages174-176
Number of pages3
ISBN (Electronic)9783800744626
StatePublished - 2017
Event2017 International Conference on Planarization/CMP Technology, ICPT 2017 - Leuven, Belgium
Duration: Oct 11 2017Oct 13 2017

Publication series

NameICPT 2017 - International Conference on Planarization/CMP Technology

Conference

Conference2017 International Conference on Planarization/CMP Technology, ICPT 2017
CountryBelgium
CityLeuven
Period10/11/1710/13/17

All Science Journal Classification (ASJC) codes

  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials

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