Atomic oxygen and the thermal oxidation of silicon

Andrew M. Hoff, Jerzy Ruzyllo

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.

Original languageEnglish (US)
Pages (from-to)1264-1265
Number of pages2
JournalApplied Physics Letters
Volume52
Issue number15
DOIs
StatePublished - Dec 1 1988

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oxidation
silicon
oxygen
afterglows
activation
temperature
augmentation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Hoff, Andrew M. ; Ruzyllo, Jerzy. / Atomic oxygen and the thermal oxidation of silicon. In: Applied Physics Letters. 1988 ; Vol. 52, No. 15. pp. 1264-1265.
@article{9e77e47499f949c4886927461f04e2f3,
title = "Atomic oxygen and the thermal oxidation of silicon",
abstract = "Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.",
author = "Hoff, {Andrew M.} and Jerzy Ruzyllo",
year = "1988",
month = "12",
day = "1",
doi = "10.1063/1.99676",
language = "English (US)",
volume = "52",
pages = "1264--1265",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

Atomic oxygen and the thermal oxidation of silicon. / Hoff, Andrew M.; Ruzyllo, Jerzy.

In: Applied Physics Letters, Vol. 52, No. 15, 01.12.1988, p. 1264-1265.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic oxygen and the thermal oxidation of silicon

AU - Hoff, Andrew M.

AU - Ruzyllo, Jerzy

PY - 1988/12/1

Y1 - 1988/12/1

N2 - Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.

AB - Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.

UR - http://www.scopus.com/inward/record.url?scp=12744256398&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12744256398&partnerID=8YFLogxK

U2 - 10.1063/1.99676

DO - 10.1063/1.99676

M3 - Article

AN - SCOPUS:12744256398

VL - 52

SP - 1264

EP - 1265

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -