Atomic oxygen and the thermal oxidation of silicon

Andrew M. Hoff, Jerzy Ruzyllo

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.

Original languageEnglish (US)
Pages (from-to)1264-1265
Number of pages2
JournalApplied Physics Letters
Volume52
Issue number15
DOIs
StatePublished - Dec 1 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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