Atomic placement of al on the gaas (001) (formula presented) reconstruction determined by angle-resolved secondary-ion mass spectrometry

S. Goss, G. Fisher, P. Kodali, Barbara Jane Garrison, Nicholas Winograd

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The atomic structure of the initial Al/GaAs (001) (Formula presented) interface has been examined by angle-resolved secondary-ion mass spectrometry. We find that Al atoms adsorb to second layer As atoms and do not disrupt the surface reconstruction up to 1.0 ML of deposited Al when prepared in situ via molecular beam epitaxy. The Al atoms are found not to adsorb to first layer As atoms and do not dimerize on this surface. The structure is determined by comparing angular distributions of (Formula presented) and (Formula presented) ions to molecular-dynamics simulations of the ion bombardment event.

Original languageEnglish (US)
Pages (from-to)10662-10669
Number of pages8
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number16
DOIs
StatePublished - Jan 1 1999

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Secondary ion mass spectrometry
secondary ion mass spectrometry
Atoms
atoms
Surface reconstruction
Angular distribution
Ion bombardment
Molecular beam epitaxy
atomic structure
Molecular dynamics
bombardment
ions
molecular beam epitaxy
angular distribution
Ions
molecular dynamics
gallium arsenide
Computer simulation
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "The atomic structure of the initial Al/GaAs (001) (Formula presented) interface has been examined by angle-resolved secondary-ion mass spectrometry. We find that Al atoms adsorb to second layer As atoms and do not disrupt the surface reconstruction up to 1.0 ML of deposited Al when prepared in situ via molecular beam epitaxy. The Al atoms are found not to adsorb to first layer As atoms and do not dimerize on this surface. The structure is determined by comparing angular distributions of (Formula presented) and (Formula presented) ions to molecular-dynamics simulations of the ion bombardment event.",
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Atomic placement of al on the gaas (001) (formula presented) reconstruction determined by angle-resolved secondary-ion mass spectrometry. / Goss, S.; Fisher, G.; Kodali, P.; Garrison, Barbara Jane; Winograd, Nicholas.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 59, No. 16, 01.01.1999, p. 10662-10669.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic placement of al on the gaas (001) (formula presented) reconstruction determined by angle-resolved secondary-ion mass spectrometry

AU - Goss, S.

AU - Fisher, G.

AU - Kodali, P.

AU - Garrison, Barbara Jane

AU - Winograd, Nicholas

PY - 1999/1/1

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AB - The atomic structure of the initial Al/GaAs (001) (Formula presented) interface has been examined by angle-resolved secondary-ion mass spectrometry. We find that Al atoms adsorb to second layer As atoms and do not disrupt the surface reconstruction up to 1.0 ML of deposited Al when prepared in situ via molecular beam epitaxy. The Al atoms are found not to adsorb to first layer As atoms and do not dimerize on this surface. The structure is determined by comparing angular distributions of (Formula presented) and (Formula presented) ions to molecular-dynamics simulations of the ion bombardment event.

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