Atomic relaxation of a junction profile

Royoichi Kikuchi, Long-qing Chen, Arezki Beldjenna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nonlinear relaxations of a sharp concentration profile typical in layered semiconductor junctions is investigated using the Path Probability Method (PPM) of irreversible statistical mechanics. Our results show that at the initial stage of the relaxation of a sharp concentration profile, atoms near the junction may diffuse up against the concentration gradient. It is shown that the cause of the uphill diffusion is the repulsion among different species, which is also the physical origin of the square gradient term.

Original languageEnglish (US)
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherPubl by Materials Research Society
Pages407-412
Number of pages6
ISBN (Print)1558992251
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume326
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kikuchi, R., Chen, L., & Beldjenna, A. (1994). Atomic relaxation of a junction profile. In Growth, Processing, and Characterization of Semiconductor Heterostructures (pp. 407-412). (Materials Research Society Symposium Proceedings; Vol. 326). Publ by Materials Research Society.