TY - GEN
T1 - Atomic relaxation of a junction profile
AU - Kikuchi, Royoichi
AU - Chen, Long-qing
AU - Beldjenna, Arezki
PY - 1994/1/1
Y1 - 1994/1/1
N2 - Nonlinear relaxations of a sharp concentration profile typical in layered semiconductor junctions is investigated using the Path Probability Method (PPM) of irreversible statistical mechanics. Our results show that at the initial stage of the relaxation of a sharp concentration profile, atoms near the junction may diffuse up against the concentration gradient. It is shown that the cause of the uphill diffusion is the repulsion among different species, which is also the physical origin of the square gradient term.
AB - Nonlinear relaxations of a sharp concentration profile typical in layered semiconductor junctions is investigated using the Path Probability Method (PPM) of irreversible statistical mechanics. Our results show that at the initial stage of the relaxation of a sharp concentration profile, atoms near the junction may diffuse up against the concentration gradient. It is shown that the cause of the uphill diffusion is the repulsion among different species, which is also the physical origin of the square gradient term.
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M3 - Conference contribution
AN - SCOPUS:0028074072
SN - 1558992251
T3 - Materials Research Society Symposium Proceedings
SP - 407
EP - 412
BT - Growth, Processing, and Characterization of Semiconductor Heterostructures
PB - Publ by Materials Research Society
T2 - Proceedings of the 1993 Fall Meeting of the Materials Research Society
Y2 - 29 November 1993 through 2 December 1993
ER -