We utilize magnetic resonance measurements to identify the fundamental atomic-scale defect structures involved in the negative bias temperature instability. In gate stacks composed of pure silicon dioxide, we find a degradation mechanism directly involving P b0 and P b1 defect centers (silicon dangling bond defects in which the silicon is back-bonded to three other silicon atoms precisely at the silicon/silicon dioxide interface). We observe that, in pure SiO2-based devices, the generation of these interface defects is catalyzed by the generation of E′ center bulk dielectric defects (silicon dangling bond defects in which the silicon is back-bonded to oxygen atoms). These observations are the first to indicate a prominent role for E′ centers in the negative bias temperature instability for pure silicon dioxide-based devices. In gate stacks composed of plasma-nitrided oxides, we identify a degradation mechanism which is dominated by the generation of a new defect center which we identify as a K N center. K N centers are silicon dangling bond defects in which the silicon is back-bonded to three nitrogen atoms with second-nearest neighbor atoms likely including oxygen. K N centers are located within the amorphous silicon oxy-nitride and electrically behave as both interface states as well as bulk dielectric defects (serve as both recombination and tunneling sites). In these plasma-nitrided gate stacks, the negative bias temperature instability does not involve the generation of P b0, P b1, or E′ centers. These collective observations provide a useful fundamental understanding with which to critically examine the current and future negative bias temperature instability framework.
|Original language||English (US)|
|Title of host publication||Bias Temperature Instability for Devices and Circuits|
|Publisher||Springer New York|
|Number of pages||52|
|ISBN (Print)||1461479088, 9781461479086|
|State||Published - Jul 1 2014|
All Science Journal Classification (ASJC) codes