Atomic scale defects in the Si/SiON system and the negative bias temperature instability

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO 2-SiON systems which are likely involved in the negative bias temperature instability.

Original languageEnglish (US)
Title of host publication2004 International Conference on Integrated Circuit Design and Technology, ICICDT
Pages299-302
Number of pages4
StatePublished - Aug 31 2004
Event2004 International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States
Duration: May 17 2004May 20 2004

Other

Other2004 International Conference on Integrated Circuit Design and Technology, ICICDT
CountryUnited States
CityAustin, TX
Period5/17/045/20/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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