Atomic scale defects involved in MOS reliability problems

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44 Scopus citations

Abstract

For quite some time, it has been known that two types of silicon dangling bond centers play important roles in metal-oxide-silicon reliability problems. Silicon dangling bonds at the Si/SiO2 boundary defects (called P b centers) dominate Si/SiO2 interface trapping. Silicon dangling bond defects (called E′ centers) dominate deep levels in the oxide. Recent observations provide a more detailed understanding of the relationship between the structure and electronic properties of the P b interface centers. Recent work also helps explain the frequently noted correlation between oxide deep level defects and Si/SiO2 interface trap defects.

Original languageEnglish (US)
Pages (from-to)173-181
Number of pages9
JournalMicroelectronic Engineering
Volume69
Issue number2-4
DOIs
StatePublished - Sep 1 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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