Atomic scale defects involved in NBTI

J. P. Campbell, P. M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

The atomic scale defect physics responsible for the negative bias temperature instability (NBTI) phenomenon are not well understood. In this study, we use a highly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to investigate the chemical and physical nature of the defects responsible for NBTI. We show that P b0 centers, Si/SiO 2 interface silicon dangling bond defects, play a major role in the interface state generation process in NBTI.

Original languageEnglish (US)
Pages118-120
Number of pages3
StatePublished - Dec 1 2004
Event2004 IEEE International Integrated Reliability Workshop Final Report - S. Lake Tahoe, CA, United States
Duration: Oct 18 2004Oct 21 2004

Other

Other2004 IEEE International Integrated Reliability Workshop Final Report
CountryUnited States
CityS. Lake Tahoe, CA
Period10/18/0410/21/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Campbell, J. P., Lenahan, P. M., Krishnan, A. T., & Krishnan, S. (2004). Atomic scale defects involved in NBTI. 118-120. Paper presented at 2004 IEEE International Integrated Reliability Workshop Final Report, S. Lake Tahoe, CA, United States.