Atomic-scale defects involved in NBTI in plasma-nitrided pMOSFETS

J. P. Campbell, P. M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We utilize a combination of DC-IV measurements as well as two very sensitive electrically detected magnetic resonance measurements, spin-dependent recombination and spin dependent tunneling, to identify the atomic-scale defects involved in the negative bias temperature instability (NBTI) in 2.3nm plasma-nitrided SiO2-based pMOSFETs. Our measurements indicate that the NBTI-induced defect in the plasma-nitrided devices participates in both spin-dependent recombination and spin-dependent tunneling. The high sensitivity of our spin-dependent tunneling measurements allow for an identification of the physical and chemical nature of this defect through observations of 29Si hyperfine interactions. We identify these defects as silicon dangling bond defects in which the central silicon is back bonded to nitrogen atoms. We assign these NBTI-induced defects as KN centers because of their similarity to K centers observed in silicon nitride. The defect identification in plasma-nitrided devices helps to explain: (1) why NBTI is exacerbated in nitrided devices and (2) conflicting reports of NBTI induced interface states and/or bulk traps.

Original languageEnglish (US)
Title of host publication2007 IEEE International Integrated Reliability Workshop Final Report, IRW
Pages12-17
Number of pages6
DOIs
StatePublished - Dec 1 2007
Event2007 IEEE International Integrated Reliability Workshop, IRW - S. Lake Tahoe, CA, United States
Duration: Oct 15 2007Oct 18 2007

Publication series

NameIEEE International Integrated Reliability Workshop Final Report

Other

Other2007 IEEE International Integrated Reliability Workshop, IRW
CountryUnited States
CityS. Lake Tahoe, CA
Period10/15/0710/18/07

Fingerprint

Plasmas
Defects
Plasma devices
Magnetic resonance measurement
Silicon
Dangling bonds
Interface states
Negative bias temperature instability
Silicon nitride
Nitrogen
Atoms

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Campbell, J. P., Lenahan, P. M., Krishnan, A. T., & Krishnan, S. (2007). Atomic-scale defects involved in NBTI in plasma-nitrided pMOSFETS. In 2007 IEEE International Integrated Reliability Workshop Final Report, IRW (pp. 12-17). [4469213] (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2007.4469213
Campbell, J. P. ; Lenahan, P. M. ; Krishnan, A. T. ; Krishnan, S. / Atomic-scale defects involved in NBTI in plasma-nitrided pMOSFETS. 2007 IEEE International Integrated Reliability Workshop Final Report, IRW. 2007. pp. 12-17 (IEEE International Integrated Reliability Workshop Final Report).
@inproceedings{276eff8fa28d4a59a62d0ed857b6edc0,
title = "Atomic-scale defects involved in NBTI in plasma-nitrided pMOSFETS",
abstract = "We utilize a combination of DC-IV measurements as well as two very sensitive electrically detected magnetic resonance measurements, spin-dependent recombination and spin dependent tunneling, to identify the atomic-scale defects involved in the negative bias temperature instability (NBTI) in 2.3nm plasma-nitrided SiO2-based pMOSFETs. Our measurements indicate that the NBTI-induced defect in the plasma-nitrided devices participates in both spin-dependent recombination and spin-dependent tunneling. The high sensitivity of our spin-dependent tunneling measurements allow for an identification of the physical and chemical nature of this defect through observations of 29Si hyperfine interactions. We identify these defects as silicon dangling bond defects in which the central silicon is back bonded to nitrogen atoms. We assign these NBTI-induced defects as KN centers because of their similarity to K centers observed in silicon nitride. The defect identification in plasma-nitrided devices helps to explain: (1) why NBTI is exacerbated in nitrided devices and (2) conflicting reports of NBTI induced interface states and/or bulk traps.",
author = "Campbell, {J. P.} and Lenahan, {P. M.} and Krishnan, {A. T.} and S. Krishnan",
year = "2007",
month = "12",
day = "1",
doi = "10.1109/IRWS.2007.4469213",
language = "English (US)",
isbn = "1424411726",
series = "IEEE International Integrated Reliability Workshop Final Report",
pages = "12--17",
booktitle = "2007 IEEE International Integrated Reliability Workshop Final Report, IRW",

}

Campbell, JP, Lenahan, PM, Krishnan, AT & Krishnan, S 2007, Atomic-scale defects involved in NBTI in plasma-nitrided pMOSFETS. in 2007 IEEE International Integrated Reliability Workshop Final Report, IRW., 4469213, IEEE International Integrated Reliability Workshop Final Report, pp. 12-17, 2007 IEEE International Integrated Reliability Workshop, IRW, S. Lake Tahoe, CA, United States, 10/15/07. https://doi.org/10.1109/IRWS.2007.4469213

Atomic-scale defects involved in NBTI in plasma-nitrided pMOSFETS. / Campbell, J. P.; Lenahan, P. M.; Krishnan, A. T.; Krishnan, S.

2007 IEEE International Integrated Reliability Workshop Final Report, IRW. 2007. p. 12-17 4469213 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Atomic-scale defects involved in NBTI in plasma-nitrided pMOSFETS

AU - Campbell, J. P.

AU - Lenahan, P. M.

AU - Krishnan, A. T.

AU - Krishnan, S.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We utilize a combination of DC-IV measurements as well as two very sensitive electrically detected magnetic resonance measurements, spin-dependent recombination and spin dependent tunneling, to identify the atomic-scale defects involved in the negative bias temperature instability (NBTI) in 2.3nm plasma-nitrided SiO2-based pMOSFETs. Our measurements indicate that the NBTI-induced defect in the plasma-nitrided devices participates in both spin-dependent recombination and spin-dependent tunneling. The high sensitivity of our spin-dependent tunneling measurements allow for an identification of the physical and chemical nature of this defect through observations of 29Si hyperfine interactions. We identify these defects as silicon dangling bond defects in which the central silicon is back bonded to nitrogen atoms. We assign these NBTI-induced defects as KN centers because of their similarity to K centers observed in silicon nitride. The defect identification in plasma-nitrided devices helps to explain: (1) why NBTI is exacerbated in nitrided devices and (2) conflicting reports of NBTI induced interface states and/or bulk traps.

AB - We utilize a combination of DC-IV measurements as well as two very sensitive electrically detected magnetic resonance measurements, spin-dependent recombination and spin dependent tunneling, to identify the atomic-scale defects involved in the negative bias temperature instability (NBTI) in 2.3nm plasma-nitrided SiO2-based pMOSFETs. Our measurements indicate that the NBTI-induced defect in the plasma-nitrided devices participates in both spin-dependent recombination and spin-dependent tunneling. The high sensitivity of our spin-dependent tunneling measurements allow for an identification of the physical and chemical nature of this defect through observations of 29Si hyperfine interactions. We identify these defects as silicon dangling bond defects in which the central silicon is back bonded to nitrogen atoms. We assign these NBTI-induced defects as KN centers because of their similarity to K centers observed in silicon nitride. The defect identification in plasma-nitrided devices helps to explain: (1) why NBTI is exacerbated in nitrided devices and (2) conflicting reports of NBTI induced interface states and/or bulk traps.

UR - http://www.scopus.com/inward/record.url?scp=49549087259&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49549087259&partnerID=8YFLogxK

U2 - 10.1109/IRWS.2007.4469213

DO - 10.1109/IRWS.2007.4469213

M3 - Conference contribution

AN - SCOPUS:49549087259

SN - 1424411726

SN - 9781424411726

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 12

EP - 17

BT - 2007 IEEE International Integrated Reliability Workshop Final Report, IRW

ER -

Campbell JP, Lenahan PM, Krishnan AT, Krishnan S. Atomic-scale defects involved in NBTI in plasma-nitrided pMOSFETS. In 2007 IEEE International Integrated Reliability Workshop Final Report, IRW. 2007. p. 12-17. 4469213. (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2007.4469213