Atomic scale defects involved in stress induced leakage currents in very thin oxides on silicon

Patrick M. Lenahan, A. Y. Kang, J. P. Campbell

Research output: Contribution to journalConference article

Abstract

Several recent studies provide strong circumstantial evidence indicating that a specific type of atomic-scale defect plays an important, likely dominating, role in stress induced leakage currents. The defect involves an oxygen deficient silicon dangling bond in the oxide; it is called an E' center.

Original languageEnglish (US)
Pages (from-to)608-615
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4746 I
StatePublished - Jan 1 2002
EventPhysics of Semiconductor Devices - Delhi, India
Duration: Dec 11 2001Dec 15 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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