Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching

Peng Gao, Jason Britson, Jacob R. Jokisaari, Christopher T. Nelson, Seung Hyub Baek, Yiran Wang, Chang Beom Eom, Long-qing Chen, Xiaoqing Pan

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

Polarization switching in ferroelectric thin films occurs via nucleation and growth of 180domains through a highly inhomogeneous process in which the kinetics are largely controlled by defects, interfaces and pre-existing domain walls. Here we present the first real-time, atomic-scale observations and phase-field simulations of domain switching dominated by pre-existing, but immobile, ferroelastic domains in Pb(Zr 0.2 Ti 0.8)O 3 thin films. Our observations reveal a novel hindering effect, which occurs via the formation of a transient layer with a thickness of several unit cells at an otherwise charged interface between a ferroelastic domain and a switched domain. This transient layer possesses a low-magnitude polarization, with a dipole glass structure, resembling the dead layer. The present study provides an atomic level explanation of the hindering of ferroelectric domain motion by ferroelastic domains. Hindering can be overcome either by applying a higher bias or by removing the as-grown ferroelastic domains in fabricated nanostructures.

Original languageEnglish (US)
Article number2791
JournalNature communications
Volume4
DOIs
StatePublished - Jan 1 2013

Fingerprint

Nanostructures
Domain walls
Ferroelectric materials
Glass
domain wall
Polarization
Ferroelectric thin films
Growth
Nucleation
Thin films
Defects
Kinetics
polarization
thin films
nucleation
dipoles
glass
defects
kinetics
cells

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Gao, P., Britson, J., Jokisaari, J. R., Nelson, C. T., Baek, S. H., Wang, Y., ... Pan, X. (2013). Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching. Nature communications, 4, [2791]. https://doi.org/10.1038/ncomms3791
Gao, Peng ; Britson, Jason ; Jokisaari, Jacob R. ; Nelson, Christopher T. ; Baek, Seung Hyub ; Wang, Yiran ; Eom, Chang Beom ; Chen, Long-qing ; Pan, Xiaoqing. / Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching. In: Nature communications. 2013 ; Vol. 4.
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Gao, P, Britson, J, Jokisaari, JR, Nelson, CT, Baek, SH, Wang, Y, Eom, CB, Chen, L & Pan, X 2013, 'Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching', Nature communications, vol. 4, 2791. https://doi.org/10.1038/ncomms3791

Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching. / Gao, Peng; Britson, Jason; Jokisaari, Jacob R.; Nelson, Christopher T.; Baek, Seung Hyub; Wang, Yiran; Eom, Chang Beom; Chen, Long-qing; Pan, Xiaoqing.

In: Nature communications, Vol. 4, 2791, 01.01.2013.

Research output: Contribution to journalArticle

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