Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface

P. M. Lenahan, T. D. Mishima, T. N. Fogarty, R. Wilkins

Research output: Contribution to journalArticlepeer-review

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Abstract

We utilize very sensitive magnetic resonance measurements to observe changes in the densities of interface trap centers hundreds of hours after irradiation. Our observations provide direct atomic-scale evidence for slow changes in Si/SiO2 interface-state density distributions which appear after the devices have been damaged. Our observations also explain (at least in part) why different groups report somewhat different shapes for the density of interface states in the silicon band gap.

Original languageEnglish (US)
Pages (from-to)3266-3268
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number20
DOIs
StatePublished - Nov 12 2001

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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