Atomically smooth ultrathin films of topological insulator Sb2Te3

Guang Wang, Xiegang Zhu, Jing Wen, Xi Chen, Ke He, Lili Wang, Xucun Ma, Ying Liu, Xi Dai, Zhong Fang, Jinfeng Jia, Qikun Xue

Research output: Contribution to journalArticle

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Abstract

The growth and characterization of single-crystalline thin films of topological insulators (TIs) is an important step towards their possible applications. Using in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we show that moderately thick Sb2Te3 films grown layer-by-layer by molecular beam epitaxy (MBE) on Si(111) are atomically smooth, single-crystalline, and intrinsically insulating. Furthermore, these films were found to exhibit a robust TI electronic structure with their Fermi energy lying within the energy gap of the bulk that intersects only the Dirac cone of the surface states. Depositing Cs in situ moves the Fermi energy of the Sb2Te3 films without changing the electronic band structure, as predicted by theory. We found that the TI behavior is preserved in Sb2Te3 films down to five quintuple layers (QLs).[Figure not available: see fulltext.]

Original languageEnglish (US)
Pages (from-to)874-880
Number of pages7
JournalNano Research
Volume3
Issue number12
DOIs
StatePublished - Nov 11 2010

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Ultrathin films
Fermi level
Crystalline materials
Surface states
Scanning tunneling microscopy
Photoelectron spectroscopy
Thick films
Molecular beam epitaxy
Band structure
Electronic structure
Cones
Energy gap
Thin films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Wang, G., Zhu, X., Wen, J., Chen, X., He, K., Wang, L., ... Xue, Q. (2010). Atomically smooth ultrathin films of topological insulator Sb2Te3. Nano Research, 3(12), 874-880. https://doi.org/10.1007/s12274-010-0060-2
Wang, Guang ; Zhu, Xiegang ; Wen, Jing ; Chen, Xi ; He, Ke ; Wang, Lili ; Ma, Xucun ; Liu, Ying ; Dai, Xi ; Fang, Zhong ; Jia, Jinfeng ; Xue, Qikun. / Atomically smooth ultrathin films of topological insulator Sb2Te3. In: Nano Research. 2010 ; Vol. 3, No. 12. pp. 874-880.
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Wang, G, Zhu, X, Wen, J, Chen, X, He, K, Wang, L, Ma, X, Liu, Y, Dai, X, Fang, Z, Jia, J & Xue, Q 2010, 'Atomically smooth ultrathin films of topological insulator Sb2Te3', Nano Research, vol. 3, no. 12, pp. 874-880. https://doi.org/10.1007/s12274-010-0060-2

Atomically smooth ultrathin films of topological insulator Sb2Te3. / Wang, Guang; Zhu, Xiegang; Wen, Jing; Chen, Xi; He, Ke; Wang, Lili; Ma, Xucun; Liu, Ying; Dai, Xi; Fang, Zhong; Jia, Jinfeng; Xue, Qikun.

In: Nano Research, Vol. 3, No. 12, 11.11.2010, p. 874-880.

Research output: Contribution to journalArticle

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AU - Wang, Guang

AU - Zhu, Xiegang

AU - Wen, Jing

AU - Chen, Xi

AU - He, Ke

AU - Wang, Lili

AU - Ma, Xucun

AU - Liu, Ying

AU - Dai, Xi

AU - Fang, Zhong

AU - Jia, Jinfeng

AU - Xue, Qikun

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N2 - The growth and characterization of single-crystalline thin films of topological insulators (TIs) is an important step towards their possible applications. Using in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we show that moderately thick Sb2Te3 films grown layer-by-layer by molecular beam epitaxy (MBE) on Si(111) are atomically smooth, single-crystalline, and intrinsically insulating. Furthermore, these films were found to exhibit a robust TI electronic structure with their Fermi energy lying within the energy gap of the bulk that intersects only the Dirac cone of the surface states. Depositing Cs in situ moves the Fermi energy of the Sb2Te3 films without changing the electronic band structure, as predicted by theory. We found that the TI behavior is preserved in Sb2Te3 films down to five quintuple layers (QLs).[Figure not available: see fulltext.]

AB - The growth and characterization of single-crystalline thin films of topological insulators (TIs) is an important step towards their possible applications. Using in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we show that moderately thick Sb2Te3 films grown layer-by-layer by molecular beam epitaxy (MBE) on Si(111) are atomically smooth, single-crystalline, and intrinsically insulating. Furthermore, these films were found to exhibit a robust TI electronic structure with their Fermi energy lying within the energy gap of the bulk that intersects only the Dirac cone of the surface states. Depositing Cs in situ moves the Fermi energy of the Sb2Te3 films without changing the electronic band structure, as predicted by theory. We found that the TI behavior is preserved in Sb2Te3 films down to five quintuple layers (QLs).[Figure not available: see fulltext.]

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Wang G, Zhu X, Wen J, Chen X, He K, Wang L et al. Atomically smooth ultrathin films of topological insulator Sb2Te3. Nano Research. 2010 Nov 11;3(12):874-880. https://doi.org/10.1007/s12274-010-0060-2