Atomically thin MoS2: A new direct-gap semiconductor

Kin Fai Mak, Changgu Lee, James Hone, Jie Shan, Tony F. Heinz

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Abstract

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,...,6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 104 compared with the bulk material.

Original languageEnglish (US)
Article number136805
JournalPhysical Review Letters
Volume105
Issue number13
DOIs
StatePublished - Sep 24 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Mak, K. F., Lee, C., Hone, J., Shan, J., & Heinz, T. F. (2010). Atomically thin MoS2: A new direct-gap semiconductor. Physical Review Letters, 105(13), [136805]. https://doi.org/10.1103/PhysRevLett.105.136805