TY - JOUR
T1 - Atomistic Insights into Nucleation and Formation of Hexagonal Boron Nitride on Nickel from First-Principles-Based Reactive Molecular Dynamics Simulations
AU - Liu, Song
AU - Van Duin, Adri C.T.
AU - Van Duin, Diana M.
AU - Liu, Bin
AU - Edgar, James H.
N1 - Funding Information:
Support from the Materials Engineering and Processing program of the National Science Foundation, award number 1538127, and the II-VI Foundation is greatly appreciated. DFT and rMD calculations were carried out thanks to the supercomputing resources and services from the Center for Nanoscale Materials (CNM) supported by the Office of Science of the U.S. Department of Energy under contract no. DE-AC02-06CH11357; the Beocat Research Cluster at Kansas State University, which is funded in part by NSF grant CNS-1006860; and the National Energy Research Scientific Computing Center (NERSC) under contract no. DE-AC0205CH11231.
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/4/25
Y1 - 2017/4/25
N2 - Atomistic-scale insights into the growth of a continuous, atomically thin hexagonal boron nitride (hBN) lattice from elemental boron and nitrogen on Ni substrates were obtained from multiscale modeling combining density functional theory (DFT) and reactive molecular dynamics. The quantum mechanical calculations focused on the adsorption and reaction energetics for the hBN building-block species, i.e., atomic B, N, BxNy (x, y = 1, 2), on Ni(111) and Ni(211), and the diffusion pathways of elemental B and N on these slab model surfaces and in the sublayer. B can diffuse competitively on both the surface and in the sublayer, while N diffuses strictly on the substrate surface. The DFT data were then used to generate a classical description of the Ni-B and Ni-N pair interactions within the formulation of the reactive force field, ReaxFF. Using the potential developed from this work, the elementary nucleation and growth process of an hBN monolayer structure from elemental B and N is shown at the atomistic scale. The nucleation initiates from the growth of linear BN chains, which evolve into branched and then hexagonal lattices. Subsequent DFT calculations confirmed the structure evolution energetically and validate the self-consistency of this multiscale modeling framework. On the basis of this framework, the fundamental aspects regarding crystal quality and the role of temperature and substrates used during hBN growth can also be understood.
AB - Atomistic-scale insights into the growth of a continuous, atomically thin hexagonal boron nitride (hBN) lattice from elemental boron and nitrogen on Ni substrates were obtained from multiscale modeling combining density functional theory (DFT) and reactive molecular dynamics. The quantum mechanical calculations focused on the adsorption and reaction energetics for the hBN building-block species, i.e., atomic B, N, BxNy (x, y = 1, 2), on Ni(111) and Ni(211), and the diffusion pathways of elemental B and N on these slab model surfaces and in the sublayer. B can diffuse competitively on both the surface and in the sublayer, while N diffuses strictly on the substrate surface. The DFT data were then used to generate a classical description of the Ni-B and Ni-N pair interactions within the formulation of the reactive force field, ReaxFF. Using the potential developed from this work, the elementary nucleation and growth process of an hBN monolayer structure from elemental B and N is shown at the atomistic scale. The nucleation initiates from the growth of linear BN chains, which evolve into branched and then hexagonal lattices. Subsequent DFT calculations confirmed the structure evolution energetically and validate the self-consistency of this multiscale modeling framework. On the basis of this framework, the fundamental aspects regarding crystal quality and the role of temperature and substrates used during hBN growth can also be understood.
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U2 - 10.1021/acsnano.6b06736
DO - 10.1021/acsnano.6b06736
M3 - Article
C2 - 28319661
AN - SCOPUS:85018642328
VL - 11
SP - 3585
EP - 3596
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
IS - 4
ER -