Atomistic modeling of the detailed structure of Si/SiO2 interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)

W. Windl, T. Liang, S. Lopatin, G. Duscher

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)826-827
Number of pages2
JournalMicroscopy and Microanalysis
Volume9
Issue numberSUPPL. 2
DOIs
StatePublished - Jan 1 2003

All Science Journal Classification (ASJC) codes

  • Instrumentation

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