Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs

A. Arun Goud, Sumeet Kumar Gupta, Sri Harsha Choday, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations
Original languageEnglish (US)
Title of host publication71st Device Research Conference, DRC 2013 - Conference Digest
Pages51-52
Number of pages2
DOIs
StatePublished - Dec 16 2013
Event71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States
Duration: Jun 23 2013Jun 26 2013

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other71st Device Research Conference, DRC 2013
CountryUnited States
CityNotre Dame, IN
Period6/23/136/26/13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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