Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs

A. Arun Goud, Sumeet Kumar Gupta, Sri Harsha Choday, Kaushik Roy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Citations (Scopus)
Original languageEnglish (US)
Title of host publication71st Device Research Conference, DRC 2013 - Conference Digest
Pages51-52
Number of pages2
DOIs
StatePublished - Dec 16 2013
Event71st Device Research Conference, DRC 2013 - Notre Dame, IN, United States
Duration: Jun 23 2013Jun 26 2013

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other71st Device Research Conference, DRC 2013
CountryUnited States
CityNotre Dame, IN
Period6/23/136/26/13

Fingerprint

FinFET

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Goud, A. A., Gupta, S. K., Choday, S. H., & Roy, K. (2013). Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs. In 71st Device Research Conference, DRC 2013 - Conference Digest (pp. 51-52). [6633788] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2013.6633788
Goud, A. Arun ; Gupta, Sumeet Kumar ; Choday, Sri Harsha ; Roy, Kaushik. / Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs. 71st Device Research Conference, DRC 2013 - Conference Digest. 2013. pp. 51-52 (Device Research Conference - Conference Digest, DRC).
@inproceedings{18e8492b4001406cb8721eb22ce35f7e,
title = "Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs",
author = "Goud, {A. Arun} and Gupta, {Sumeet Kumar} and Choday, {Sri Harsha} and Kaushik Roy",
year = "2013",
month = "12",
day = "16",
doi = "10.1109/DRC.2013.6633788",
language = "English (US)",
isbn = "9781479908110",
series = "Device Research Conference - Conference Digest, DRC",
pages = "51--52",
booktitle = "71st Device Research Conference, DRC 2013 - Conference Digest",

}

Goud, AA, Gupta, SK, Choday, SH & Roy, K 2013, Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs. in 71st Device Research Conference, DRC 2013 - Conference Digest., 6633788, Device Research Conference - Conference Digest, DRC, pp. 51-52, 71st Device Research Conference, DRC 2013, Notre Dame, IN, United States, 6/23/13. https://doi.org/10.1109/DRC.2013.6633788

Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs. / Goud, A. Arun; Gupta, Sumeet Kumar; Choday, Sri Harsha; Roy, Kaushik.

71st Device Research Conference, DRC 2013 - Conference Digest. 2013. p. 51-52 6633788 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs

AU - Goud, A. Arun

AU - Gupta, Sumeet Kumar

AU - Choday, Sri Harsha

AU - Roy, Kaushik

PY - 2013/12/16

Y1 - 2013/12/16

UR - http://www.scopus.com/inward/record.url?scp=84890053158&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890053158&partnerID=8YFLogxK

U2 - 10.1109/DRC.2013.6633788

DO - 10.1109/DRC.2013.6633788

M3 - Conference contribution

AN - SCOPUS:84890053158

SN - 9781479908110

T3 - Device Research Conference - Conference Digest, DRC

SP - 51

EP - 52

BT - 71st Device Research Conference, DRC 2013 - Conference Digest

ER -

Goud AA, Gupta SK, Choday SH, Roy K. Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs. In 71st Device Research Conference, DRC 2013 - Conference Digest. 2013. p. 51-52. 6633788. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2013.6633788