Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistors

M. Städele, A. Di Carlo, P. Lugli, F. Sacconi, Blair Richard Tuttle

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

This paper reviews the basic methodology and highlights advantages and recent applications of atomistic tight-binding calculations for the investigation of carrier transport in extremely scaled SOI transistors. The calculations yield numerous insights into direct and defect-assisted gate oxide tunneling, source-drain transport and tunneling, subband coupling, and carrier quantization in ultrathin-body devices with (possibly strained) Si and SiGe channels. The present results are in very good agreement with the available experimental data and document limitations of the standard effective-mass-based schemes.

Original languageEnglish (US)
Pages (from-to)229-232
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: Dec 8 2003Dec 10 2003

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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