Balanced InP/InGaAs photodiodes with 1.5-W output power

Qiugui Zhou, Allen S. Cross, Yang Fu, Andreas Beling, Brian M. Foley, Patrick Hopkins, J. C. Campbell

Research output: Contribution to journalArticle

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Abstract

We report InP/InGaAs modified unitraveling-carrier balanced photodiodes (PDs). The back-illuminated PDs were flip-chip bonded on diamond submounts for enhanced heat sinking. The device demonstrated a 3-dB bandwidth of 8 GHz and a 30-dB common-mode rejection ratio at frequencies of < 10 GHz. High saturation current of > 320 mA, maximum output power of 31.7 dBm (1.5 W) into a 50-Ω load, and good linearity with a third-order intercept point of up to 47 dBm were measured at the 3-dB bandwidth frequency of 8 GHz.

Original languageEnglish (US)
Article number6515609
JournalIEEE Photonics Journal
Volume5
Issue number3
DOIs
StatePublished - Jun 11 2013

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Zhou, Q., Cross, A. S., Fu, Y., Beling, A., Foley, B. M., Hopkins, P., & Campbell, J. C. (2013). Balanced InP/InGaAs photodiodes with 1.5-W output power. IEEE Photonics Journal, 5(3), [6515609]. https://doi.org/10.1109/JPHOT.2013.2262672