We report InP/InGaAs modified unitraveling-carrier balanced photodiodes (PDs). The back-illuminated PDs were flip-chip bonded on diamond submounts for enhanced heat sinking. The device demonstrated a 3-dB bandwidth of 8 GHz and a 30-dB common-mode rejection ratio at frequencies of < 10 GHz. High saturation current of > 320 mA, maximum output power of 31.7 dBm (1.5 W) into a 50-Ω load, and good linearity with a third-order intercept point of up to 47 dBm were measured at the 3-dB bandwidth frequency of 8 GHz.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering