Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces

Jennifer DiStefano, Yu Chuan Lin, Joshua Robinson, Nicholas R. Glavin, Andrey A. Voevodin, Justin Brockman, Markus Kuhn, Benjamin French, Sean W. King

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

To facilitate the design of future heterostructure devices employing two-dimensional (2D) materials such as molybdenum disulphide (MoS2) and hexagonal/sp2 boron nitride (BN), x-ray photoelectron spectroscopy (XPS) has been utilized to determine the valence band offset (VBO) present at interfaces formed between these materials. For MoS2 grown on a pulsed laser-deposited amorphous BN (a-BN) layer with sp2 bonding, the VBO was determined to be 1.4 ± 0.2 eV. Similarly, the VBO between the a-BN layer and the aluminum oxide (Al2O3) substrate was determined to be 1.1 ± 0.2 eV. Using the bandgaps established in the literature for MoS2, h-BN, and Al2O3, the conduction band offsets (CBOs) at the MoS2/a-BN and a-BN/Al2O3 interfaces were additionally calculated to be 3.3 ± 0.2 and 1.7 ± 0.2 eV, respectively. The resulting large VBOs and CBOs indicate BN and Al2O3 are attractive gate dielectrics and substrates for future 2D MoS2 devices.

Original languageEnglish (US)
Pages (from-to)983-988
Number of pages6
JournalJournal of Electronic Materials
Volume45
Issue number2
DOIs
StatePublished - Feb 1 2016

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    DiStefano, J., Lin, Y. C., Robinson, J., Glavin, N. R., Voevodin, A. A., Brockman, J., Kuhn, M., French, B., & King, S. W. (2016). Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces. Journal of Electronic Materials, 45(2), 983-988. https://doi.org/10.1007/s11664-015-4255-x