TY - JOUR
T1 - Band Alignment of Al2O3on α-(AlxGa1-x)2O3
AU - Xia, Xinyi
AU - Al-Mamun, Nahid Sultan
AU - Fares, Chaker
AU - Haque, Aman
AU - Ren, Fan
AU - Hassa, Anna
AU - Von Wenckstern, Holger
AU - Grundmann, Marius
AU - Pearton, S. J.
N1 - Funding Information:
The work was performed as part of Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA), sponsored by the Department of the Defense, Defense Threat Reduction Agency under award HDTRA1-20-2-0002. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at PSU was partially supported by the NSF ECCS 2015795. The work at UF was also supported by NSF DMR 1856662 (James Edgar). The work at Leipzig was supported by the European Social Fund within the Young Investigator Group “Oxide Heterostructures” (SAB 100310460), by Universität Leipzig in research profile area “Complex Matter” as well as within the framework of GraFOx, a Leibniz-Science Campus partially funded by the Leibniz Association. The authors at Leipzig thank Jörg Lenzner for EDX measurements and Monika Hahn for PLD target preparation.
Publisher Copyright:
© 2022 Electrochemical Society Inc.. All rights reserved.
PY - 2022/2
Y1 - 2022/2
N2 - X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al2O3 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys over a wide range of Al contents, x, from 0.26-0.74, corresponding to a bandgap range from 5.8-7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x >0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of-0.07 eV for x = 0.58 and-0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the α-(AlxGa1-x)2O3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.
AB - X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al2O3 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys over a wide range of Al contents, x, from 0.26-0.74, corresponding to a bandgap range from 5.8-7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x >0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of-0.07 eV for x = 0.58 and-0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the α-(AlxGa1-x)2O3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.
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U2 - 10.1149/2162-8777/ac546f
DO - 10.1149/2162-8777/ac546f
M3 - Article
AN - SCOPUS:85125721941
SN - 2162-8769
VL - 11
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 2
M1 - 025006
ER -