Band Engineering of Dirac Surface States in Topological-Insulator-Based van der Waals Heterostructures

Cui Zu Chang, Peizhe Tang, Xiao Feng, Kang Li, Xu Cun Ma, Wenhui Duan, Ke He, Qi Kun Xue

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

The existence of a gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the nontrivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the environment near the surface. In this Letter, through in situ angle-resolved photoemission spectroscopy and first-principles calculation on 3D TI-based van der Waals heterostructures, we demonstrate that one can engineer the surface band structures of 3D TIs by surface modifications without destroying their topological nontrivial property. The result provides an accessible method to independently control the surface and bulk electronic structures of 3D TIs, and sheds light on designing artificial topological materials for electronic and spintronic purposes.

Original languageEnglish (US)
Article number136801
JournalPhysical Review Letters
Volume115
Issue number3
DOIs
StatePublished - Sep 23 2015

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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