Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon

A. Agrawal, J. Lin, B. Zheng, S. Sharma, S. Chopra, K. Wang, A. Gelatos, S. Mohney, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

24 Scopus citations

Abstract

Metal-insulator-Si (MIS) tunnel contact is studied using ultrathin, non-stoichiometric TiO2-x interlayer on n- and n+ Si. Systematic analysis indicates a record low Schottky barrier height (SBH) of 0.15eV for Ti metal using 10A thick TiO2-x interlayer (TIns). Ti/TiO2-x/n+ Si contact achieves a record low specific contact resistivity (ρc) of 9.1×10-9ω-cm 2.The modeling of ρc suggests tunneling mass, m*Tunnel, of 0.7m0 for TiO2-x compared to stoichiometric TiO2 indicating transition from an insulator to a wide gap semiconductor.

Original languageEnglish (US)
Title of host publication2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
PagesT200-T201
StatePublished - Sep 9 2013
Event2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan
Duration: Jun 11 2013Jun 13 2013

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2013 Symposium on VLSI Technology, VLSIT 2013
CountryJapan
CityKyoto
Period6/11/136/13/13

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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