Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon

A. Agrawal, J. Lin, B. Zheng, S. Sharma, S. Chopra, K. Wang, A. Gelatos, S. Mohney, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Citations (Scopus)

Abstract

Metal-insulator-Si (MIS) tunnel contact is studied using ultrathin, non-stoichiometric TiO2-x interlayer on n- and n+ Si. Systematic analysis indicates a record low Schottky barrier height (SBH) of 0.15eV for Ti metal using 10A thick TiO2-x interlayer (TIns). Ti/TiO2-x/n+ Si contact achieves a record low specific contact resistivity (ρc) of 9.1×10-9ω-cm 2.The modeling of ρc suggests tunneling mass, m*Tunnel, of 0.7m0 for TiO2-x compared to stoichiometric TiO2 indicating transition from an insulator to a wide gap semiconductor.

Original languageEnglish (US)
Title of host publication2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
PagesT200-T201
StatePublished - Sep 9 2013
Event2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan
Duration: Jun 11 2013Jun 13 2013

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2013 Symposium on VLSI Technology, VLSIT 2013
CountryJapan
CityKyoto
Period6/11/136/13/13

Fingerprint

Tunnels
Silicon
Metals
Tin
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Agrawal, A., Lin, J., Zheng, B., Sharma, S., Chopra, S., Wang, K., ... Datta, S. (2013). Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon. In 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers (pp. T200-T201). [6576652] (Digest of Technical Papers - Symposium on VLSI Technology).
Agrawal, A. ; Lin, J. ; Zheng, B. ; Sharma, S. ; Chopra, S. ; Wang, K. ; Gelatos, A. ; Mohney, S. ; Datta, S. / Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon. 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 2013. pp. T200-T201 (Digest of Technical Papers - Symposium on VLSI Technology).
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abstract = "Metal-insulator-Si (MIS) tunnel contact is studied using ultrathin, non-stoichiometric TiO2-x interlayer on n- and n+ Si. Systematic analysis indicates a record low Schottky barrier height (SBH) of 0.15eV for Ti metal using 10A thick TiO2-x interlayer (TIns). Ti/TiO2-x/n+ Si contact achieves a record low specific contact resistivity (ρc) of 9.1×10-9ω-cm 2.The modeling of ρc suggests tunneling mass, m*Tunnel, of 0.7m0 for TiO2-x compared to stoichiometric TiO2 indicating transition from an insulator to a wide gap semiconductor.",
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Agrawal, A, Lin, J, Zheng, B, Sharma, S, Chopra, S, Wang, K, Gelatos, A, Mohney, S & Datta, S 2013, Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon. in 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers., 6576652, Digest of Technical Papers - Symposium on VLSI Technology, pp. T200-T201, 2013 Symposium on VLSI Technology, VLSIT 2013, Kyoto, Japan, 6/11/13.

Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon. / Agrawal, A.; Lin, J.; Zheng, B.; Sharma, S.; Chopra, S.; Wang, K.; Gelatos, A.; Mohney, S.; Datta, S.

2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 2013. p. T200-T201 6576652 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Lin, J.

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AB - Metal-insulator-Si (MIS) tunnel contact is studied using ultrathin, non-stoichiometric TiO2-x interlayer on n- and n+ Si. Systematic analysis indicates a record low Schottky barrier height (SBH) of 0.15eV for Ti metal using 10A thick TiO2-x interlayer (TIns). Ti/TiO2-x/n+ Si contact achieves a record low specific contact resistivity (ρc) of 9.1×10-9ω-cm 2.The modeling of ρc suggests tunneling mass, m*Tunnel, of 0.7m0 for TiO2-x compared to stoichiometric TiO2 indicating transition from an insulator to a wide gap semiconductor.

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Agrawal A, Lin J, Zheng B, Sharma S, Chopra S, Wang K et al. Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon. In 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 2013. p. T200-T201. 6576652. (Digest of Technical Papers - Symposium on VLSI Technology).