Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon

A. Agrawal, J. Lin, B. Zheng, S. Sharma, S. Chopra, K. Wang, A. Gelatos, S. Mohney, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

26 Scopus citations

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Engineering & Materials Science