BASIC PROPERTIES OF LATERAL MIS TUNNEL TRANSISTOR.

Jerzy Ruzyllo, J. Stach

Research output: Contribution to journalConference article

Abstract

The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC's. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.

Original languageEnglish (US)
Pages (from-to)795-796
Number of pages2
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Jan 1 1980
EventTech Dig Int Electron Devices Meet - Washington, DC, USA
Duration: Dec 8 1980Dec 10 1980

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BASIC (programming language)
Management information systems
MIS (semiconductors)
tunnels
Tunnels
Transistors
transistors
Tunnel diodes
tunnel diodes
high speed
Processing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{9ec4961ddf1a4324a4edd635667626f8,
title = "BASIC PROPERTIES OF LATERAL MIS TUNNEL TRANSISTOR.",
abstract = "The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC's. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.",
author = "Jerzy Ruzyllo and J. Stach",
year = "1980",
month = "1",
day = "1",
language = "English (US)",
pages = "795--796",
journal = "Technical Digest - International Electron Devices Meeting",
issn = "0163-1918",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

BASIC PROPERTIES OF LATERAL MIS TUNNEL TRANSISTOR. / Ruzyllo, Jerzy; Stach, J.

In: Technical Digest - International Electron Devices Meeting, 01.01.1980, p. 795-796.

Research output: Contribution to journalConference article

TY - JOUR

T1 - BASIC PROPERTIES OF LATERAL MIS TUNNEL TRANSISTOR.

AU - Ruzyllo, Jerzy

AU - Stach, J.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC's. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.

AB - The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC's. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.

UR - http://www.scopus.com/inward/record.url?scp=0019269224&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019269224&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0019269224

SP - 795

EP - 796

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -