BASIC PROPERTIES OF LATERAL MIS TUNNEL TRANSISTOR.

J. Ruzyllo, J. Stach

Research output: Contribution to journalConference article

Abstract

The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC's. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.

Original languageEnglish (US)
Pages (from-to)795-796
Number of pages2
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1980
EventTech Dig Int Electron Devices Meet - Washington, DC, USA
Duration: Dec 8 1980Dec 10 1980

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'BASIC PROPERTIES OF LATERAL MIS TUNNEL TRANSISTOR.'. Together they form a unique fingerprint.

  • Cite this