Basic sputtering process and ferroelectric properties of single-domain single-crystal thin films of PbTiO3

Kiyotaka Wasa, Yoko Haneda, Toshifumi Sato, Hideaki Adachi, Isaku Kanno, Darrell G. Schlom, S. Trolier-Mckinstry, Qing Gan, Chang Beom Eom

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9 Scopus citations

Abstract

Single c-domain single crystal PbTiO3 (PT) thin films were prepared Dy sputtering on both miscut (001) SrTiO3 (ST) and (110) SrRuO3 /miscut (001) ST substrates with a miscut angle of 1.7°. Film thickness ranged from. 5 nm to 250 nm. The film growth was governed by step-flow growth and the film surface was atomically flat. The lattice misfit strain induced during the film growth was quenched. The PT films were tetragonally deformed and tightly bonded to the ST. The PT films showed no anomaly on the curves of lattice parameter in terms of temperature (temperature range, room temp. to 600 °C), due to their excellent interfacial quality, although anomalies are expected at the Curie temperature (around 490 °C in bulk PT). The P/E loops suggest that the saturation polarization PS was 40 pC/cm2 with a high coercive field of 400 to 500 kV/cm and a dielectric constant of 60 to 70 at 1 KHz. The PS of the PT thin film is about half that of bulk PT.

Original languageEnglish (US)
Pages (from-to)451-460
Number of pages10
JournalIntegrated Ferroelectrics
Volume21
Issue number1-4
DOIs
StatePublished - Jan 1 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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