Behavior of native defects in semi-insulating 4H-SiC after high temperature anneals and different cool-down rates

N. Y. Garces, E. R. Glaser, W. E. Carlos, M. A. Fanton

Research output: Contribution to journalConference article

1 Scopus citations


We have recently explored the nature and stability of native defects in high-purity semi-insulating 4H-SiC bulk substrates grown by PVT and HTCVD methods after post-growth anneal treatments up to 2400°C using electron paramagnetic resonance (EPR) and low-temperature photoluminescence (PL) experiments. In the present study we have extended these investigations to SI 4H-SiC subjected to the same post-growth high-temperature anneal treatments, where significantly enhanced carrier lifetimes have been reported for such conditions, but cooled at different rates ranging from ∼2-25°C/min. Previously, the intensities of the native defects decreased monotonically with anneals from 1200-1800°C; however, it was recently observed that several of these defects reappear after annealing at 2100°C and above. Our results illustrate the effects of the post-growth anneal treatments and cool-down rates on the concentrations of native defects.

Original languageEnglish (US)
Pages (from-to)389-392
Number of pages4
JournalMaterials Science Forum
Publication statusPublished - Apr 10 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this