Behaviour of defects in semi-insulating 4H-SiC after ultra-high temperature anneal treatments

N. Y. Garces, E. R. Glaser, W. E. Carlos, Mark Andrew Fanton

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We have recently explored the nature and stability of native defects in SI 4H-SiC after post-growth anneals between 1000 and 1800 °C from combined electron paramagnetic resonance (EPR) and low-temperature infrared photoluminescence (PL) experiments. In the present work we have extended these studies to SI 4H-SiC subjected to very high post-growth anneal temperatures (1900-2400 °C) where significantly enhanced carrier lifetimes have been recently reported for such conditions. Previously, the intensities of the VC, VSi, VC-VSi and SI-5 EPR decreased monotonically with anneals from 1200 to 1800 °C. In this work, surprisingly, many of these defects reappeared after annealing at 2100 °C and above. Similar annealing behavior was observed for the IR PL lines. Many defects are present during growth and these results illustrate the effects of the post-growth anneal treatments on their concentrations.

Original languageEnglish (US)
Pages (from-to)77-80
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - Dec 15 2007

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this