Beryllium doping and silicon amphotericity in (1 1 0) GaAs-based heterostructures: Structural and optical properties

J. Xu, E. Towe, Q. Yuan, R. Hull

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The use of beryllium as an acceptor at high doping levels in (1 1 0)GaAs-based heterostructures is found to be deleterious to the structural and optical properties of these epi-layers. This may limit the use of beryllium as a p-type dopant on the (1 1 0) surface. Because silicon is amphoteric on the (1 1 0), it can be used as an alternative p-type dopant, in addition to its traditional role as an n-type dopant. Transmission electron microscopy, optical absorption, and luminescence data indicate that high quality multiple quantum well structures with p-type GaAs buffer layers doped with silicon, rather than beryllium, can be grown.

Original languageEnglish (US)
Pages (from-to)26-32
Number of pages7
JournalJournal of Crystal Growth
Volume196
Issue number1
DOIs
StatePublished - Jan 1 1999

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this